Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

SI1469DH-T1-GE3

Vishay Intertech · MOSFETs · SC-70-6(SOT-363)

SI1469DH-T1-GE3 from Vishay Intertech, in a SC-70-6(SOT-363). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, one of four drain leads tied internally; VDS rated -20 V and continuous drain current limited to -2.7 A (package limited).
2 D passive Drain, one of four drain leads tied internally that lower on-resistance and junction-to-ambient thermal resistance.
3 G input Gate, with maximum gate-source voltage of ±12 V and threshold of -0.6 V to -1.5 V.
4 S passive Source of the P-channel MOSFET, with continuous source-drain diode current of -1.6 A at TC = 25 °C.
5 D passive Drain, one of four drain leads tied internally for improved thermal path to the PCB.
6 D passive Drain, one of four drain leads tied internally; pulsed drain current up to -8 A (10 µs pulse).

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SC-70-6(SOT-363)
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.6 -1.5 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 55 °C) IDSS 10 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -3 A VDS ≤ 5 V, VGS = - 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.065 0.08 Ω VGS = - 10 V, ID = - 2.0 A 2
Drain-Source On-State Resistance RDS(on) 0.081 0.1 Ω VGS = - 4.5 V, ID = - 1.8 A 2
Drain-Source On-State Resistance RDS(on) 0.126 0.155 Ω VGS = - 2.5 V, ID = - 1.5 A 2
Total Gate Charge Qg 5.5 8.5 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A 2
Turn-On Delay Time td(on) 27 41 ns VDD = - 10 V, RL = 5 Ω, ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 48 72 ns VDD = - 10 V, RL = 5 Ω, ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 27 41 ns VDD = - 10 V, RL = 5 Ω, ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 15 23 ns VDD = - 10 V, RL = 5 Ω, ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD = - 10 V, RL = 5 Ω, ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 20 30 ns VDD = - 10 V, RL = 5 Ω, ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 22 33 ns VDD = - 10 V, RL = 5 Ω, ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = - 10 V, RL = 5 Ω, ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -1.6 A TC = 25 °C 2
Pulse Diode Forward Current ISM -6.5 A 2
Body Diode Voltage VSD -0.83 -1.2 V IS = - 2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 20 30 ns IF = - 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 8 15 nC 2
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -2.7 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -3.2 A TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current ID -2.6 A TJ = 150 °C, TA = 70 °C 1
Pulsed Drain Current IDM -8 A 10 µs pulse width 1
Continuous Source-Drain Diode Current IS -2.3 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1.25 A TA = 25 °C 1
Maximum Power Dissipation PD 2.78 W TC = 25 °C 1
Maximum Power Dissipation PD 1.78 W TC = 70 °C 1
Maximum Power Dissipation PD 1.5 W TA = 25 °C 1
Maximum Power Dissipation PD 1 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 60 80 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 34 45 °C/W Steady state 1
Maximum Junction-to-Ambient RthJA 125 °C/W Steady state (note d) 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version 8

CAD (KiCad official)

  • Symbol: SI1469DH-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC-70-6(SOT-363) (KiCad packages3D, STEP)
  • 3D model files: si1469dh-t1-ge3-etched.step / si1469dh-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1469dh-t1-ge3.step / si1469dh-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (12 pp, sha256 2f25f3e357599a16, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF