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NRVBA1H100NT3G

Public Made by Adom

by adom

onsemi Schottky Barrier Diodes (SBD), SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

NRVBA1H100NT3G

onsemi · Schottky Barrier Diodes (SBD) · SMA

NRVBA1H100NT3G from onsemi, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode lead, identified by the polarity band on the SMA package; the device is rated for a peak repetitive reverse voltage (VRRM) of 100 V.
2 ANODE passive Anode lead of the Schottky rectifier, the terminal opposite the polarity-banded cathode lead.

Key specifications

Parameter Value
Manufacturer onsemi
Package SMA
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Average Rectified Forward Current (TL = 167°C) IO 1 A TL = 167°C 2
Non-Repetitive Peak Surge Current IFSM 50 A Surge applied at rated load conditions, halfwave, single phase, 60 Hz 2
Storage and Operating Junction Temperature Range Tstg, TJ -65 175 °C Note 1 2
Peak Repetitive Reverse Voltage VRRM 100 V 2
Working Peak Reverse Voltage VRWM 100 V 2
DC Blocking Voltage VR 100 V 2
Thermal Resistance, Junction-to-Lead RθJL 14 °C/W Note 2 2
Thermal Resistance, Junction-to-Ambient RθJA 75 °C/W Note 2 (700 mm2 copper pad, 1 oz FR4) 2
Thermal Resistance, Junction-to-Ambient RθJA 280 °C/W Note 3 (approx. 6 mm2 copper pad, 1 oz FR4) 2
Maximum Instantaneous Forward Voltage VF 0.76 V IF = 1.0 A, TJ = 25°C; pulse test, Note 4 2
Maximum Instantaneous Forward Voltage VF 0.84 V IF = 2.0 A, TJ = 25°C; pulse test, Note 4 2
Maximum Instantaneous Forward Voltage VF 0.61 V IF = 1.0 A, TJ = 125°C; pulse test, Note 4 2
Maximum Instantaneous Forward Voltage VF 0.68 V IF = 2.0 A, TJ = 125°C; pulse test, Note 4 2
Maximum Instantaneous Reverse Current IR 40 A Rated dc voltage, TJ = 25°C; pulse test, Note 4 2
Maximum Instantaneous Reverse Current IR 0.5 mA Rated dc voltage, TJ = 125°C; pulse test, Note 4 2

CAD (KiCad official)

  • Symbol: NRVBA1H100NT3G
  • Footprint: Diode_SMD:D_SMA
  • 3D model: SMA (KiCad packages3D, STEP)
  • 3D model files: nrvba1h100nt3g-etched.step / nrvba1h100nt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nrvba1h100nt3g.step / nrvba1h100nt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 3db6b30f37777bd0, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF