component
IMBG65R083M1HXTMA1
Public Made by Adomby adom
Infineon Technologies Silicon Carbide Field Effect Transistor (MOSFET), TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIMBG65R083M1HXTMA1
Infineon Technologies · Silicon Carbide Field Effect Transistor (MOSFET) · TO-263-7
IMBG65R083M1HXTMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate; the gate-source voltage operating range including undershoots is -2 V to 20 V, and the recommended driving voltage is 0 V to 18 V. |
| 2 | Driver Source | passive | Separate driver source pin that must not be exchanged with the power source pins, as exchanging them might lead to malfunction. |
| 3 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 4 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 5 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 6 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 7 | Power Source | passive | Main power source connection of the MOSFET; the source and sense source pins are not exchangeable. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous DC drain current | ID | 28 | A | TC=25°C | 3 | ||
| Continuous DC drain current | ID | 20 | A | TC=100°C | 3 | ||
| Peak drain current | IDM | 59 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 95 | mJ | ID=3.6A,VDD=50V;see table 11 | 3 | ||
| Avalanche energy, repetitive | EAR | 0.48 | mJ | ID=3.6A,VDD=50V;see table 11 | 3 | ||
| Avalanche current, single pulse | IAS | 3.6 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 200 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -5 | 23 | V | static | 3 | |
| Gate source voltage (transient) | VGS | -7 | 25 | V | tpulse,positive<=1%dutycycle/fsw | 3 | |
| Power dissipation | Ptot | 126 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Operating junction temperature | TJ | -55 | 175 | °C | 3 | ||
| Continuous reverse drain current | ISDC | 28 | A | VGS=18V,TC=25°C | 3 | ||
| Continuous reverse drain current | ISDC | 19 | A | VGS=0V,TC=25°C | 3 | ||
| Repetitive peak reverse drain current | ISRM | 59 | A | TC=25°C,pulsewidth tp<=250ns | 3 | ||
| Thermal resistance, junction - case | RthJC | 1.19 | °C/W | 4 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | device on PCB, minimal footprint | 4 | ||
| Thermal resistance, junction - ambient for SMD version | RthJA | 35 | 45 | °C/W | Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling | 4 | |
| Soldering temperature, wave- & reflow soldering allowed | Tsold | 260 | °C | reflow MSL1 | 4 | ||
| Gate-source voltage operating range including undershoots | VGS | -2 | 20 | V | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V,ID=0.33mA | 5 | ||
| Gate threshold voltage | VGS(th) | 3.5 | 4.5 | 5.7 | V | VDS=VGS,ID=3.3mA | 5 |
| Zero gate voltage drain current | IDSS | 1 | 150 | µA | VDS=650V,VGS=0V,TJ=25°C | 5 | |
| Zero gate voltage drain current | IDSS | 3 | µA | VDS=650V,VGS=0V,TJ=175°C | 5 | ||
| Gate leakage current | IGSS | 100 | nA | VGS=20V,VDS=0V | 5 | ||
| Drain-source on-state resistance | RDS(on) | 0.083 | 0.111 | Ω | VGS=18V,ID=11.2A,TJ=25°C | 5 | |
| Drain-source on-state resistance | RDS(on) | 0.116 | Ω | VGS=18V,ID=11.2A,TJ=175°C | 5 | ||
| Output capacitance | Coss | 73 | 95 | pF | VGS=0V,VDS=400V,f=250kHz | 5 | |
| Output charge | Qoss | 44 | 57 | nC | calculation based on Coss | 5 |
CAD (KiCad official)
- Symbol:
IMBG65R083M1HXTMA1 - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin8 - 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files:
imbg65r083m1hxtma1-etched.step/imbg65r083m1hxtma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);imbg65r083m1hxtma1.step/imbg65r083m1hxtma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (15 pp, sha256
8ecf18910f073c88, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).