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Contents

README

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ACST830-8T

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

ACST830-8T from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 COM passive Common terminal (triac main terminal referenced as COM); dV/dt, IH and (dI/dt)c are specified for both polarities of OUT referenced to COM.
2 OUT passive Output terminal of the triac switch, also connected to the metal tab; 8 A rms on-state current, 800 V VDRM/VRRM, with 850 V minimum clamping voltage.
3 G input Gate trigger input with IGT max 30 mA and VGT max 1.0 V (VOUT = 12 V, RL = 33 Ω), peak gate current 1.6 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
On-state rms current (full sine wave) IT(RMS) 8 A TO-220AB, D2PAK Tc = 105 °C 2
Non repetitive surge peak on-state current ITSM 80 A Tj initial = 25 °C, f = 50 Hz, tp = 20 ms, full cycle sine wave 2
Non repetitive surge peak on-state current ITSM 84 A Tj initial = 25 °C, f = 60 Hz, tp = 16.7 ms, full cycle sine wave 2
I2t for fuse selection I2t 42 A2s tp = 10 ms 2
Critical rate of rise on-state current dI/dt 100 A/μs IG = 2 x IGT, tr ≤ 100 ns, f = 120 Hz, Tj = 125 °C 2
Non repetitive line peak pulse voltage VPP 2 kV Tj = 25 °C 2
Average gate power dissipation PG(AV) 0.1 W Tj = 125 °C 2
Peak gate power dissipation PGM 10 W tp = 20 ms, Tj = 125 °C 2
Peak gate current IGM 1.6 A tp = 20 ms, Tj = 125 °C 2
Storage temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Lead temperature for soldering TL 260 °C 10 s, at 3 mm from plastic case 2
Gate trigger current IGT 30 mA VOUT = 12 V, RL = 33 Ω, quadrants I - II - III 2
Gate trigger voltage VGT 1 V 2
Gate non-trigger voltage VGD 0.2 V VOUT = VDRM, RL = 3.3 kΩ, Tj = 125 °C, quadrants I - II - III 2
Holding current IH 30 mA IOUT = 500 mA 2
Latching current IL 50 mA IG = 1.2 x IGT, quadrants I - II - III 2
Critical rate of rise of off-state voltage dV/dt 2000 V/µs VOUT = 67% VDRM, gate open, Tj = 125 °C 2
Critical rate of decrease of main current (dI/dt)c 8 A/ms Without snubber, Tj = 125 °C 2
Clamping voltage VCL 850 V ICL = 0.1 mA, tp = 1 ms 2
On-state voltage VTM 1.5 V IOUT = 11.3 A, tp = 500 µs, Tj = 25 °C 3
Threshold voltage VT0 0.9 V Tj = 125 °C 3
Dynamic resistance RD 50 mΩ Tj = 125 °C 3
Repetitive peak off-state current IDRM 20 µA VOUT = VDRM/VRRM, Tj = 25 °C 3
Repetitive peak off-state current IDRM 1 mA VOUT = VDRM/VRRM, Tj = 125 °C 3
Repetitive peak reverse current IRRM 20 µA VOUT = VDRM/VRRM, Tj = 25 °C 3
Repetitive peak reverse current IRRM 1 mA VOUT = VDRM/VRRM, Tj = 125 °C 3
Junction to ambient thermal resistance Rth(j-a) 60 °C/W TO-220AB 3
Junction to case thermal resistance (AC) Rth(j-c) 2 °C/W TO-220AB 3

CAD (KiCad official)

  • Symbol: ACST830-8T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: acst830-8t-etched.step / acst830-8t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); acst830-8t.step / acst830-8t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (17 pp, sha256 fab0af0f7f89fd6d, retrieved 2026-10-11, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF