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GC4D30120H
Public Made by Adomby adom
SUPSiC SiC Diodes, TO-247-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGC4D30120H
SUPSiC · SiC Diodes · TO-247-2
GC4D30120H from SUPSiC, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | PIN 1 | passive | Labelled PIN 1 on the TO-247-2 package drawing; the datasheet does not state whether this terminal is the anode or the cathode. |
| 2 | PIN 2 | passive | Labelled PIN 2 on the TO-247-2 package drawing; the datasheet does not state whether this terminal is the anode or the cathode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage (TJ = 25 °C) | VF | 1.5 | 1.8 | V | IF = 30 A, TJ = 25 °C | 2 | |
| Forward Voltage (TJ = 175 °C) | VF | 2.2 | 3 | V | IF = 30 A, TJ = 175 °C | 2 | |
| Reverse Current (TJ = 25 °C) | IR | 40 | 250 | µA | VR = 1200 V, TJ = 25 °C | 2 | |
| Reverse Current (TJ = 175 °C) | IR | 70 | 450 | µA | VR = 1200 V, TJ = 175 °C | 2 | |
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | 1 | |||
| DC Blocking Voltage | VDC | 1200 | V | 1 | |||
| Continuous Forward Current (TJ = 25 °C) | IF | 94 | A | TJ = 25 °C | 1 | ||
| Continuous Forward Current (TJ = 135 °C) | IF | 45 | A | TJ = 135 °C | 1 | ||
| Continuous Forward Current (TJ = 155 °C) | IF | 30 | A | TJ = 155 °C | 1 | ||
| Repetitive Peak Forward Surge Current (Tc = 25 °C) | IFRM | 121 | A | Tc = 25 °C, tp = 10 ms, Half Sine Pulse | 1 | ||
| Repetitive Peak Forward Surge Current (Tc = 110 °C) | IFRM | 68 | A | Tc = 110 °C, tp = 10 ms, Half Sine Pulse | 1 | ||
| Non-Repetitive Forward Surge Current (Tc = 25 °C) | IFSM | 233 | A | Tc = 25 °C, tp = 10 ms, Half Sine Pulse | 1 | ||
| Non-Repetitive Forward Surge Current (Tc = 110 °C) | IFSM | 209 | A | Tc = 110 °C, tp = 10 ms, Half Sine Pulse | 1 | ||
| Power Dissipation (Tc = 25 °C) | Ptot | 441 | W | Tc = 25 °C | 1 | ||
| Power Dissipation (Tc = 110 °C) | Ptot | 191 | W | Tc = 110 °C | 1 | ||
| i2t Value (Tc = 25 °C) | ∫i2t | 271 | A2s | Tc = 25 °C, tp = 10 ms | 1 | ||
| i2t Value (Tc = 110 °C) | ∫i2t | 218 | A2s | Tc = 110 °C, tp = 10 ms | 1 | ||
| Operating Junction & Storage Temperature | TJ, Tstg | -55 | 175 | °C | 2 | ||
| Maximum Processing Temperature | TPROC | 325 | 10 min. Maximum | 2 | |||
| Thermal Resistance, Junction to Case | Rθ, JC | 0.34 | °C / W | 2 |
CAD (KiCad official)
- Symbol:
GC4D30120H - Footprint:
Package_TO_SOT_THT:TO-247-2_Vertical - 3D model: TO-247-2 (KiCad packages3D, STEP)
- 3D model files:
gc4d30120h-etched.step/gc4d30120h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gc4d30120h.step/gc4d30120h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SUPSiC datasheet (5 pp, sha256
7b9914f5680267c5, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).