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SI8711CC-B-IS

Public Made by Adom

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Skyworks Solutions Digital Isolators, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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SI8711CC-B-IS

Skyworks Solutions · Digital Isolators · SOIC-8

SI8711CC-B-IS from Skyworks Solutions, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected No connect, not internally connected; connect to the ground plane to maximize CMTI performance.
2 ANODE input Anode of LED emulator; VO follows the signal applied to this input with respect to the CATHODE input.
3 CATHODE input Cathode of LED emulator; VO follows the signal applied to ANODE with respect to this input.
4 NC unconnected No connect, not internally connected; connect to the ground plane to maximize CMTI performance.
5 GND power_in External MOSFET source connection and ground reference for VDD, typically connected to ground but may be tied to a negative or positive voltage.
6 VO output Open-collector output signal.
7 VL passive Output pull-up load (internal 20 kΩ resistor); tie to VO to enable the load.
8 VDD power_in Output-side power supply input referenced to GND (30 V max).

Key specifications

Parameter Value
Manufacturer Skyworks Solutions
Package SOIC-8
Category Signal Isolation Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD Supply Voltage VDD 3 30 V 4
Input Current (Si87xxC) IF(ON) 3 15 mA Si87xxC devices 4
Operating Temperature (Ambient) TA -40 125 °C 4
Supply Voltage VDD 3 30 V (VDD-GND) 4
Supply Current IDD 1.7 mA Output high or low (VDD = 5 to 30 V) 4
Input Current Threshold IF(TH) 1.8 mA Si87xxC devices 4
Input Forward Voltage (OFF) VF(OFF) 1 V Measured at ANODE with respect to CATHODE. 4
Input Forward Voltage (ON) VF(ON) 1.6 2.8 V Measured at ANODE with respect to CATHODE. 4
Logic Low Output Voltage VOL 0.4 V IOL = 3 mA, VDD = 3.3 or 5 V 4
Logic Low Output Voltage VOL 0.7 V IOL = 13 mA, VDD = 5.5 V 4
Logic High Output Current IOH 0.5 µA VDD = VOUT = 5.5 V 4
Logic High Output Current IOH 1 µA VDD = VOUT = 24 V 4
Output Low Impedance ROL 54 Ω 4
Minimum Pulse Width MPW 1 µs Si87xxC devices 5
Maximum Data Rate FDATA 1 MBPS Si87xxC devices; min DC 5
Propagation Delay (Low-to-High) tPLH 60 ns CL = 15 pF using 350 Ω pull-up 5
Propagation Delay (High-to-Low) tPHL 60 ns CL = 15 pF using 350 Ω pull-up 5
Pulse Width Distortion PWD 20 ns / tPLH, tPHL / 5
Propagation Delay Skew tPSK(p-p) 20 ns between different units operating at same supply voltage, load, and ambient temp. 5
Device Startup Time tSTART 40 µs 5
Common Mode Transient Immunity CMTI 20 35 kV/µs Output = low or high, VCM = 1500 V, IF = 3 mA for Si87xxC devices 5
Input Current Hysteresis IHYS 0.17 mA Si87xxC devices 4
Input Capacitance CI 15 pF f = 100 kHz, VF = 0 V, VF = 2 V 4
Peak Output Current IOPK 50 mA Peak DC collector current drive (VDD = 5 V) 4
Pull-up Resistor RPU 20 kΩ Using internal pull-up 4
Rise Time tR 15 ns CL = 15 pF using 350 Ω pull-up 5
Fall Time tF 5 ns CL = 15 pF using 350 Ω pull-up 5
Storage Temperature TSTG -65 150 °C 13
Operating Temperature TA -40 125 °C 13
Junction Temperature TJ 140 °C 13
Average Forward Input Current IF(AVG) 15 mA Si87xxC devices 13
Peak Transient Input Current IFTR 1 A < 1 µs pulse width, 300 ps 13
Reverse Input Voltage VR 0.3 V 13
Supply Voltage VDD -0.5 36 V 13
Output Voltage VOUT -0.5 36 V 13
Output Sink Current ISINK 15 mA 13
Average Output Current IO(AVG) 8 mA 13
Peak Output Current IOPK 175 mA VDD = 5 V 13
Input Power Dissipation PI 90 mW 13
Output Power Dissipation PO 50 mW 13
Total Power Dissipation PT 140 mW 13
Lead Solder Temperature 260 °C 10 s 13
Maximum Isolation Voltage (SOIC-8) 4500 VRMS 1 s, SOIC-8 13
HBM ESD Rating 3 kV HBM 13
Machine Model ESD Rating 200 V Machine Model 13
CDM ESD Rating 500 V CDM 13
IC Junction-to-Air Thermal Resistance θJA 110 ºC/W SOIC-8 11
Capacitance (Input-Output) CIO 1 pF f = 1 MHz, SOIC-8 8

CAD (KiCad official)

  • Symbol: SI8711CC-B-IS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: si8711cc-b-is-etched.step / si8711cc-b-is-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si8711cc-b-is.step / si8711cc-b-is.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Skyworks Solutions datasheet (38 pp, sha256 b40ba4deb80b79ef, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF