component
IRF7104PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7104PBF-HXY
HXY MOSFET · MOSFETs · SOP-8
IRF7104PBF-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; the datasheet rates drain-source voltage at -20 V and continuous drain current at -4 A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; absolute maximum gate-source voltage is ±12 V, with threshold of -0.6 V min to -1.7 V max. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; the datasheet rates drain-source voltage at -20 V and continuous drain current at -4 A. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; absolute maximum gate-source voltage is ±12 V, with threshold of -0.6 V min to -1.7 V max. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2 (pins 5 and 6 are tied together); drain-source voltage rated -20 V, pulsed drain current -20 A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2 (pins 5 and 6 are tied together); drain-source voltage rated -20 V, pulsed drain current -20 A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1 (pins 7 and 8 are tied together); drain-source voltage rated -20 V, pulsed drain current -20 A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1 (pins 7 and 8 are tied together); drain-source voltage rated -20 V, pulsed drain current -20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | -4 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | -20 | A | TA=25℃, Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | Note 2 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 2 | ||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.02 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 85 | 95 | mΩ | VGS=-4.5V, ID=-5.8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 110 | mΩ | VGS=-2.5V, ID=-3.5A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.6 | -1.1 | -1.7 | V | VGS=VDS, ID=-250uA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | 4.32 | mV/℃ | VGS=VDS, ID=-250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Forward Transconductance | gfs | 5.5 | S | VDS=-5V, ID=-3A | 2 | ||
| Gate Resistance | Rg | 24 | 48 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Total Gate Charge (-4.5V) | Qg | 10.6 | 15 | nC | VDS=-16V, VGS=-4.5V, ID=-5.8A | 2 | |
| Gate-Source Charge | Qgs | 1 | nC | VDS=-16V, VGS=-4.5V, ID=-5.8A | 2 | ||
| Gate-Drain Charge | Qgd | 2 | nC | VDS=-16V, VGS=-4.5V, ID=-5.8A | 2 | ||
| Turn-On Delay Time | Td(on) | 10 | 12 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RG=10Ω | 2 | |
| Rise Time | Tr | 4.9 | 6 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RG=10Ω | 2 | |
| Turn-Off Delay Time | Td(off) | 22 | 42 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RG=10Ω | 2 | |
| Fall Time | Tf | 3 | 9 | ns | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RG=10Ω | 2 | |
| Continuous Source Current | IS | -2 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -20 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1.7A, TJ=25℃ | 2 | ||
| Input Capacitance | Ciss | 325 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 60 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 30 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
IRF7104PBF-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7104pbf-hxy-etched.step/irf7104pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7104pbf-hxy.step/irf7104pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
7ae9781b9b121a4d, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).