component
BDFN2C4R51V50
Public Made by Adomby adom
BORN ESD And Surge Protection (TVS/ESD), DFN1006-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBDFN2C4R51V50
BORN · ESD And Surge Protection (TVS/ESD) · DFN1006-2
BDFN2C4R51V50 from BORN, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Pin 1 | passive | One terminal of the bidirectional silicon-avalanche ESD protection diode, rated for a 4.5 V reverse stand-off voltage (VRWM) and IEC 61000-4-2 ±30 kV contact and air discharge. |
| 2 | Pin 2 | passive | The other terminal of the bidirectional silicon-avalanche ESD protection diode, rated for a 4.5 V reverse stand-off voltage (VRWM) and IEC 61000-4-2 ±30 kV contact and air discharge. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BORN |
| Package | DFN1006-2 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Leakage Current | IR | 0.1 | μA | VRWM=4.5V,T=25℃ | 2 | ||
| Reverse Breakdown Voltage | VBR | 4.7 | V | IT=1mA | 2 | ||
| Reverse Stand-Off Voltage | VRWM | 4.5 | V | 2 | |||
| Peak Pulse Current | IPP | 40 | A | tp =8/20μs | 2 | ||
| Clamping Voltage (IPP=1A) | VC | 5.5 | V | IPP=1A,tp=8/20μs | 2 | ||
| Clamping Voltage (IPP=20A) | VC | 7.5 | V | IPP=20A,tp=8/20μs | 2 | ||
| Clamping Voltage (IPP=40A) | VC | 13 | V | IPP=40A,tp=8/20μs | 2 | ||
| Junction Capacitance | Cj | 90 | pF | VR = 0V, f = 1MHz | 2 | ||
| Peak Pulse Power | PPP | 500 | Watts | tp =8/20μs | 2 | ||
| Peak Pulse Current | Ipp | 40 | A | tp =8/20μs (note1) | 2 | ||
| ESD per IEC 61000-4-2 (Air) | VESD | 30 | kV | IEC 61000-4-2 air | 2 | ||
| ESD per IEC 61000-4-2 (Contact) | VESD | 30 | kV | IEC 61000-4-2 contact | 2 | ||
| Lead Soldering Temperature | TL | 260 | ℃ | 10 seconds | 2 | ||
| Junction Temperature | TJ | -55 | 125 | ℃ | 2 | ||
| Storage Temperature | Tstg | -55 | 125 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
BDFN2C4R51V50 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files:
bdfn2c4r51v50-etched.step/bdfn2c4r51v50-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bdfn2c4r51v50.step/bdfn2c4r51v50.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BORN datasheet (4 pp, sha256
43353c87ebec1261, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).