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Contents

README

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SI3590DV

TECH PUBLIC · MOSFETs · SOT-23-6

SI3590DV from TECH PUBLIC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the N-channel MOSFET (Q1), with VGS rated ±20 V and a threshold of 1.2 V min, 1.5 V typ, 2.2 V max.
2 S2 passive Source of the P-channel MOSFET (Q2), with VDS rated -30 V and continuous drain current of -3.0 A at TA=25°C.
3 G2 input Gate of the P-channel MOSFET (Q2), with VGS rated ±20 V and a threshold of -1 V min, -1.6 V typ, -2.5 V max.
4 D2 passive Drain of the P-channel MOSFET (Q2), with VDS rated -30 V and pulsed drain current of -15 A.
5 S1 passive Source of the N-channel MOSFET (Q1), with VDS rated 30 V and continuous drain current of 4.0 A at TA=25°C.
6 D1 passive Drain of the N-channel MOSFET (Q1), with VDS rated 30 V and pulsed drain current of 20 A.

Key specifications

Parameter Value
Manufacturer TECH PUBLIC
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: SI3590DV
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: si3590dv-etched.step / si3590dv-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si3590dv.step / si3590dv.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TECH PUBLIC datasheet (10 pp, sha256 2eedcfdad347bdf7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF