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Contents

README

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BC856W

Nexperia · Bipolar Transistors - BJT · SOT-323

BC856W from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the PNP transistor (Table 3 pinning, graphic symbol B); the datasheet gives no separate electrical limit for this pin, so the Table 6 limiting values apply to the device.
2 E passive Emitter terminal of the PNP transistor (Table 3 pinning, graphic symbol E); the datasheet gives no separate electrical limit for this pin, so the Table 6 limiting values apply to the device.
3 C passive Collector terminal of the PNP transistor (Table 3 pinning, graphic symbol C); the datasheet gives no separate electrical limit for this pin, so the Table 6 limiting values apply to the device.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base voltage VCBO -80 V open emitter 3
collector-emitter voltage VCEO -65 V open base 3
emitter-base voltage VEBO -5 V open collector 3
collector current IC -100 mA 3
peak collector current ICM -200 mA 3
peak base current IBM -200 mA 3
total power dissipation Ptot 200 mW Tamb ≤ 25 °C [1] 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -65 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air [1] 4
collector-base breakdown voltage V(BR)CBO -80 V IC = -100 µA; IE = 0 A 5
collector-emitter breakdown voltage V(BR)CEO -65 V IC = -2 mA; IB = 0 A 5
emitter-base breakdown voltage V(BR)EBO -5 V IC = 0 A; IE = -100 µA 5
collector-base cut-off current ICBO -1 -15 nA VCB = -30 V; IE = 0 A 5
collector-base cut-off current ICBO -4 µA VCB = -30 V; IE = 0 A; Tj = 150 °C 5
emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A 5
DC current gain hFE 125 475 VCE = -5 V; IC = -2 mA 5
collector-emitter saturation voltage VCEsat -75 -300 mV IC = -10 mA; IB = -0.5 mA 5
collector-emitter saturation voltage VCEsat -250 -600 mV IC = -100 mA; IB = -5 mA [1] 5
base-emitter voltage VBE -600 -650 -750 mV VCE = -5 V; IC = -2 mA 5
base-emitter voltage VBE -820 mV VCE = -5 V; IC = -10 mA 5
transition frequency fT 100 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz 5
noise figure NF 2 10 dB IC = -200 µA; VCE = -5 V; RS = 2 kΩ; f = 1 kHz; B = 200Hz 5

CAD (KiCad official)

  • Symbol: BC856W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc856w-etched.step / bc856w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc856w.step / bc856w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 6ecc839c70f13953, retrieved 2026-11-04, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF