component
CMU5N60
Public Made by Adomby adom
Cmos MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMU5N60
Cmos · MOSFETs · TO-251
CMU5N60 from Cmos, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±30 V, with a gate threshold of 3.0 to 5.0 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage is rated 600 V, with continuous drain current of 4.5 A at TC = 25℃ and 18 A pulsed. |
| 3 | S | passive | Source; the body diode runs from source to drain, with a continuous forward current of 4.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos |
| Package | TO-251 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 600 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (TC = 125℃) | IDSS | 10 | µA | VDS = 480 V, TC = 125℃ | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 2.2 | 2.5 | Ω | VGS = 10 V, ID = 2.25 A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4.5 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 18 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 4.5 A | 2 | ||
| Drain-Source Voltage | VDSS | 600 | V | TC = 25℃ | 1 | ||
| Drain Current - Continuous | ID | 4.5 | A | TC = 25℃ | 1 | ||
| Drain Current - Continuous | ID | 2.6 | A | TC = 100℃ | 1 | ||
| Drain Current - Pulsed | IDM | 18 | A | TC = 25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC = 25℃ | 1 | |
| Single Pulsed Avalanche Energy | EAS | 270 | mJ | TC = 25℃ | 1 | ||
| Avalanche Current | IAR | 4.5 | A | TC = 25℃ | 1 | ||
| Repetitive Avalanche Energy | EAR | 4.9 | mJ | TC = 25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | TC = 25℃ | 1 | ||
| Power Dissipation | PD | 54 | W | TC = 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering purposes | TL | 300 | ℃ | 1/8 from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.31 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 110 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
CMU5N60 - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
cmu5n60-etched.step/cmu5n60-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmu5n60.step/cmu5n60.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos datasheet (3 pp, sha256
6fdbd5e97443335f, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).