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Contents

README

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HIMZA65R030M1HXKSA1

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HIMZA65R030M1HXKSA1 from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the SiC N-channel MOSFET, shown as Pin 1 and connected to the TAB; the maximum drain-source voltage is 650 V (VDS).
2 Power Source passive Main power source terminal of the MOSFET, carrying the power current path; the datasheet gives no separate electrical limit for this pin.
3 Driver Source passive Separate driver source pin provided so the gate drive return is kept apart from the power source path, as stated in the optimized package feature.
4 Gate input Gate input of the MOSFET; the datasheet specifies VGS of -5/+20 V (recommended) and dynamic absolute maximum VGSmax of -10/+25 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 650 V 1
Continuous drain current ID 97 A TC = 25°C 1
Continuous drain current ID 69 A TC = 100°C 1
Pulsed drain current ID pulse 241 A TC = 25°C, tp limited by Tjmax 1
Power dissipation Ptot 429 W TC = 25°C 1
Avalanche energy, single pulse EAS 1620 mJ L = 10mH 1
Gate-source voltage VGS -5 20 V 1
Gate-source voltage (dynamic) VGSmax -10 25 V dynamic, absolute maximum values 1
Operating junction and storage temperature Tj, Tstg -55 175 °C 1
Drain-source breakdown voltage BVDSS 650 V VGS = 0V, ID = 250uA 2
Continuous diode forward current IS 83 A VGS = 4V, TC = 25°C 3

CAD (KiCad official)

  • Symbol: HIMZA65R030M1HXKSA1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: himza65r030m1hxksa1-etched.step / himza65r030m1hxksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); himza65r030m1hxksa1.step / himza65r030m1hxksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (8 pp, sha256 bc543f1c840f51ab, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF