component
G75P04S
Public Made by Adomby adom
GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG75P04S
GOFORD · MOSFETs · SOP-8
G75P04S from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS rated -40V, continuous drain current -20A. |
| 2 | S | passive | Source of the P-channel MOSFET; VDS rated -40V, continuous drain current -20A. |
| 3 | S | passive | Source of the P-channel MOSFET; VDS rated -40V, continuous drain current -20A. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS maximum ±20V, threshold -1.0V to -2.5V at -250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS -40V, pulsed drain current -80A. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDS -40V, pulsed drain current -80A. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDS -40V, pulsed drain current -80A. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDS -40V, pulsed drain current -80A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | -20 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | -80 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 5.7 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy | EAS | 306 | mJ | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | TC = 25ºC | 1 | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 22 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -40V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.4 | -2.5 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 5.3 | 8 | mΩ | VGS = -10V, ID = -10A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 6.9 | 10 | mΩ | VGS = -4.5V, ID = -10A | 2 | |
| Continuous Body Diode Current | IS | -20 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -10A, VGS = 0V | 2 | ||
| Forward Transconductance | gFS | 30 | S | VDS = -5V, ID = -10A | 2 | ||
| Input Capacitance | Ciss | 6893 | pF | VGS = 0V, VDS = -20V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 732 | pF | VGS = 0V, VDS = -20V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 679 | pF | VGS = 0V, VDS = -20V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 106 | nC | VDD = -20V, ID = -10A, VGS = -10V | 2 | ||
| Gate-Source Charge | Qgs | 22 | nC | VDD = -20V, ID = -10A, VGS = -10V | 2 | ||
| Gate-Drain Charge | Qgd | 27 | nC | VDD = -20V, ID = -10A, VGS = -10V | 2 | ||
| Turn-on Delay Time | td(on) | 15 | ns | VDD = -20V, ID = -10A, RG = 1Ω | 2 | ||
| Turn-on Rise Time | tr | 12 | ns | VDD = -20V, ID = -10A, RG = 1Ω | 2 | ||
| Turn-off Delay Time | td(off) | 70 | ns | VDD = -20V, ID = -10A, RG = 1Ω | 2 | ||
| Turn-off Fall Time | tf | 18 | ns | VDD = -20V, ID = -10A, RG = 1Ω | 2 | ||
| Reverse Recovery Charge | Qrr | 50 | nC | IF = -10A, VGS = 0V, di/dt=-100A/us | 2 | ||
| Reverse Recovery Time | Trr | 53 | ns | IF = -10A, VGS = 0V, di/dt=-100A/us | 2 |
CAD (KiCad official)
- Symbol:
G75P04S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
g75p04s-etched.step/g75p04s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g75p04s.step/g75p04s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
9581e189ff270509, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).