component
2N7002KW_R1_00001
Public Made by Adomby adom
PANJIT International MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N7002KW_R1_00001
PANJIT International · MOSFETs · SOT-323
2N7002KW_R1_00001 from PANJIT International, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, gate threshold 1 V to 2.5 V at VDS=VGS, ID=250 µA, with 2 kV HBM ESD protection. |
| 2 | S | passive | Source; continuous source-drain diode current up to 115 mA (pulsed 800 mA). |
| 3 | D | passive | Drain; drain-source voltage rated 60 V with continuous drain current of 115 mA (pulsed 800 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Continuous Drain Current | ID | 115 | mA | 1 | |||
| Pulsed Drain Current | IDM | 800 | mA | 1 | |||
| Maximum Power Dissipation | PD | 200 | mW | TA=25 OC | 1 | ||
| Maximum Power Dissipation | PD | 120 | mW | TA=75 OC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | OC | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 625 | OC/W | PCB mounted | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=10uA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 4 | Ω | VGS=4.5V, ID=200mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 3 | Ω | VGS=10V, ID=500mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=60V, VGS=0V | 2 | ||
| Gate Body Leakage | IGSS | 10 | uA | VGS=+20V, VDS=0V | 2 | ||
| Forward Transconductance | gfS | 100 | mS | VDS=15V, ID=250mA | 2 | ||
| Total Gate Charge | Qg | 0.8 | nC | VDS=15V, ID=200mA, VGS=4.5V | 2 | ||
| Turn-On Delay Time | ton | 20 | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 | ||
| Turn-Off Delay Time | toff | 40 | ns | VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω | 2 | ||
| Input Capacitance | Ciss | 35 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 | ||
| Output Capacitance | Coss | 10 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 2 | ||
| Diode Forward Voltage | VSD | 0.82 | 1.3 | V | IS=200mA, VGS=0V | 2 | |
| Continuous Diode Forward Current | IS | -115 | mA | 2 | |||
| Pulsed Diode Forward Current | ISM | -800 | mA | 2 |
CAD (KiCad official)
- Symbol:
2N7002KW_R1_00001 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
2n7002kw-r1-00001-etched.step/2n7002kw-r1-00001-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002kw-r1-00001.step/2n7002kw-r1-00001.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (7 pp, sha256
d804ee1082116112, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).