component
ESD9N5V-2
Public Made by Adomby adom
WILLSEMI(Will Semicon) TVS, DFN1006-2L. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownESD9N5V-2
WILLSEMI(Will Semicon) · TVS · DFN1006-2L
ESD9N5V-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI(Will Semicon) |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power | Ppk | 150 | W | tp = 8/20μs | 2 | ||
| Peak pulse current | IPP | 10 | A | tp = 8/20μs | 2 | ||
| ESD according to IEC61000-4-2 air discharge | VESD | -30 | 30 | kV | IEC61000-4-2 air discharge | 2 | |
| ESD according to IEC61000-4-2 contact discharge | VESD | -30 | 30 | kV | IEC61000-4-2 contact discharge | 2 | |
| Junction temperature | TJ | 125 | oC | 2 | |||
| Operating temperature | TOP | -40 | 85 | oC | 2 | ||
| Lead temperature | TL | 260 | oC | 2 | |||
| Storage temperature | TSTG | -55 | 150 | oC | 2 | ||
| Reverse stand-off voltage | VRWM | 5 | V | 3 | |||
| Reverse leakage current | IR | 1 | μA | VRWM = 5V | 3 | ||
| Reverse breakdown voltage | VBR | 6 | 8 | V | IT = 1mA | 3 | |
| Forward voltage | VF | 0.4 | 0.8 | 1.3 | V | IF = 10mA | 3 |
| Junction capacitance | CJ | 60 | 80 | pF | VR = 0V, f = 1MHz | 3 | |
| Junction capacitance | CJ | 30 | 40 | pF | VR = 5V, f = 1MHz | 3 | |
| Clamping voltage 1) | VCL | 11 | V | IPP = 16A, tp = 100ns | 3 | ||
| Clamping voltage 2) | VCL | 11 | V | VESD = 8kV | 3 | ||
| Clamping voltage 3) | VC | 10 | V | Ipp = 1A tp = 8/20μs | 3 | ||
| Clamping voltage 3) | VC | 15 | V | Ipp = 10A tp = 8/20μs | 3 | ||
| Dynamic resistance 1) | RDYN | 0.25 | Ω | 3 |
CAD (KiCad official)
- Symbol:
ESD9N5V-2 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
esd9n5v-2-etched.step/esd9n5v-2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esd9n5v-2.step/esd9n5v-2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WILLSEMI(Will Semicon) datasheet (6 pp, sha256
4f3bf0c05ab4679c, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).