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CRG50T60AK3SD
Public Made by Adomby adom
CRMICRO IGBTs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCRG50T60AK3SD
CRMICRO · IGBTs · TO-247
CRG50T60AK3SD from CRMICRO, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter voltage is rated ±20 V (±30 V for tp≤10us, D<0.01) with threshold VGE(th) 5.3 to 7 V at IC=1mA. |
| 2 | C | passive | Collector (also connected to the mounting tab); collector-emitter voltage is rated 650 V with 50 A continuous collector current at TC=100°C. |
| 3 | E | passive | Emitter; the anti-parallel diode anode connects here and the diode is rated 50 A continuous forward current at TC=100°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | 650 | V | 2 | |||
| Gate- Emitter Voltage | VGES | -20 | 20 | V | 2 | ||
| Gate- Emitter Voltage (pulse) | VGES | -30 | 30 | V | tp≤10us, D<0.01 | 2 | |
| Collector Current | IC | 100 | A | TC = 25 °C | 2 | ||
| Collector Current | IC | 50 | A | TC = 100 °C | 2 | ||
| Pulsed Collector Current | ICM | 150 | A | Repetitive rating; pulse width limited by maximum junction temperature (a1) | 2 | ||
| Diode Continuous Forward Current | IF | 50 | A | TC = 100 °C | 2 | ||
| Diode Maximum Forward Current | IFM | 150 | A | 2 | |||
| Short-Circuit Time | Tsc | 10 | μs | VGE=15V, VCE=400V, Tc=25℃ | 2 | ||
| Power Dissipation | PD | 500 | W | TC = 25°C | 2 | ||
| Power Dissipation | PD | 250 | W | TC = 100 °C | 2 | ||
| Operating Junction Temperature | TJ | -40 | 175 | ℃ | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Maximum Temperature for Soldering | TL | 270 | ℃ | 2 | |||
| Thermal Resistance, Junction to case for IGBT | RθJC | 0.3 | ℃/W | 2 | |||
| Thermal Resistance, Junction to case for Diode | RθJC | 0.42 | ℃/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 40 | ℃/W | 2 | |||
| Collector-Emitter Breakdown Voltage | V(BR)CES | 650 | V | VGE=0V, ICE=250uA | 2 | ||
| Collector-Emitter Leakage Current | ICES | 1 | mA | VGE=0V, VCE=650V | 2 | ||
| Gate to Emitter Forward Leakage | IGES(F) | 250 | nA | VGE=+20V | 2 | ||
| Gate to Source Reverse Leakage | IGES(R) | -250 | nA | VGE =-20V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.65 | 2.25 | V | IC=50A, VGE=15V | 2 | |
| Gate Threshold Voltage | VGE(th) | 5.3 | 6.1 | 7 | V | IC=1mA, VCE=VGE | 2 |
| Diode Forward Voltage | VF | 1.65 | 2.4 | V | IF=50A | 3 | |
| Input Capacitance | Cies | 7719 | pF | VCE=30V, VGE=0V, f=1MHz | 2 | ||
| Output Capacitance | Coes | 189 | pF | VCE=30V, VGE=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Cres | 123 | pF | VCE=30V, VGE=0V, f=1MHz | 3 | ||
| Turn-on Delay Time | td(on) | 117 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=25℃ | 3 | ||
| Rise Time | tr | 91 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=25℃ | 3 | ||
| Turn-Off Delay Time | td(off) | 316 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=25℃ | 3 | ||
| Fall Time | tf | 64 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=25℃ | 3 | ||
| Turn-On Switching Loss | Eon | 3.18 | mJ | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=25℃ | 3 | ||
| Turn-Off Switching Loss | Eoff | 1.54 | mJ | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=25℃ | 3 | ||
| Total Switching Loss | Ets | 4.72 | mJ | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=25℃ | 3 | ||
| Rise Time | tr | 88 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=150℃ | 3 | ||
| Turn-Off Delay Time | td(off) | 336 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=150℃ | 3 | ||
| Fall Time | tf | 61 | ns | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=150℃ | 3 | ||
| Turn-On Switching Loss | Eon | 3.21 | mJ | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=150℃ | 3 | ||
| Turn-Off Switching Loss | Eoff | 1.62 | mJ | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=150℃ | 3 | ||
| Total Switching Loss | Ets | 4.83 | mJ | VCE=400V, IC=50A, Rg=10Ω, VGE=15V, Inductive Load, TJ=150℃ | 3 | ||
| Total Gate Charge | Qg | 303 | nC | VCE=400V, IC=50A, VGE=15V | 3 | ||
| Gate to Emitter Charge | Qge | 77 | nC | VCE=400V, IC=50A, VGE=15V | 3 | ||
| Gate to Collector Charge | Qgc | 128 | nC | VCE=400V, IC=50A, VGE=15V | 3 | ||
| Reverse Recovery Time | trr | 54 | ns | IF=50A, di/dt=200A/uS | 3 | ||
| Reverse Recovery Current | Irrm | 2.1 | A | IF=50A, di/dt=200A/uS | 3 | ||
| Reverse Recovery Charge | Qrr | 110 | nC | IF=50A, di/dt=200A/uS | 3 |
CAD (KiCad official)
- Symbol:
CRG50T60AK3SD - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
crg50t60ak3sd-etched.step/crg50t60ak3sd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crg50t60ak3sd.step/crg50t60ak3sd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (9 pp, sha256
04916d86c8629ec1, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).