component
HSK12N02
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSK12N02
HUASHUO · MOSFETs · SOT-89
HSK12N02 from HUASHUO, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, threshold 0.45 to 1.2 V at 250 uA. |
| 2 | D | passive | Drain (center pin, also connected to the tab); drain-source voltage 20 V, continuous current 12 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current 12 A, pulsed 48 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 12 | A | TC=25℃, VGS @ 4.5V | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 9.3 | A | TC=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 48 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.7 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=70℃ | 1.2 | W | TA=70℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 100 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 12 | mΩ | VGS=4.5V, ID=12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 16 | mΩ | VGS=2.5V, ID=8A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.75 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Continuous Source Current | IS | 12 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 48 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSK12N02 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
hsk12n02-etched.step/hsk12n02-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsk12n02.step/hsk12n02.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (5 pp, sha256
bcd9fc8d4ba9c4a3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).