component

BD140 PNP Power Transistor

Public Made by Adom

by adom

PNP medium-power transistor, 80 V / 1.5 A, the complement of the BD139 in TO-126.

transistorbjtpnpmedium-powerto-126st
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

BD140

STMicroelectronics · Bipolar Transistor (BJT) · TO-126

The BD140 is a PNP medium-power transistor rated for 80 V and 1.5 A continuous collector current in a TO-126 package. It is the complement of the NPN BD139, and the two are paired in class-AB audio output stages, complementary drivers, and general medium-power switching.

Pinout

Pin Name Type Function
1 E passive Emitter of the PNP BJT. Typical VCE(sat) = -0.5 V at IC = -0.5 A, IB = -0.05 A; VBE approximately -1 V at IC = -0.5 A, VCE = -2 V.
2 C passive Collector of the PNP BJT. Also electrically bonded to the metal mounting tab of the SOT-32/TO-126 package. Absolute maximum VCEO = -80 V, VCBO = -80 V, IC = -1.5 A continuous, ICM = -3 A peak.
3 B input Base of the PNP BJT. Drives collector current via hFE (typ. 40..250 at IC = -150 mA, VCE = -2 V). Absolute maximum VEBO = -5 V, IB = -0.5 A.

Key specifications

Parameter Value
Type PNP medium-power transistor
Collector-emitter voltage (VCEO) -80 V
Collector current (IC) -1.5 A continuous (-3 A peak)
DC current gain (hFE) 40 to 250
Transition frequency (fT) 75 MHz
Power dissipation 12.5 W
Operating temperature -55 C to 150 C

Ordering variants

  • BD140
  • BD140-10
  • BD140-16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (IE = 0) VCBO -80 V IE = 0 3
Collector-emitter voltage (IB = 0) VCEO -80 V IB = 0 3
Emitter-base voltage (IC = 0) VEBO -5 V IC = 0 3
Collector current IC -1.5 A 3
Collector peak current ICM -3 A 3
Base current IB -0.5 A 3
Total dissipation at Tc ≤ 25 °C PTOT 12.5 W Tc ≤ 25 °C 3
Total dissipation at Tamb ≤ 25 °C PTOT 1.25 W Tamb ≤ 25 °C 3
Storage temperature Tstg -65 150 °C 3
Max. operating junction temperature Tj 150 °C 3
Collector cut-off current (IE=0) ICBO -0.1 µA VCB = -30 V 4
Collector cut-off current (IE=0) ICBO -10 µA VCB = -30 V, TC = 125 °C 4
Emitter cut-off current (IC=0) IEBO -10 µA VEB = -5 V 4
Collector-emitter sustaining voltage (IB=0) VCEO(sus) -80 V IC = -30 mA, BD140 4
Collector-emitter saturation voltage VCE(sat) -0.5 V IC = -0.5 A, IB = -0.05 A 4
Base-emitter voltage VBE -1 V IC = -0.5 A, VCE = -2 V 4
DC current gain hFE 25 IC = -5 mA, VCE = -2 V 4
DC current gain hFE 40 250 IC = -150 mA, VCE = -2 V 4
Thermal resistance junction-case Rthj-case 10 °C/W 3
Thermal resistance junction-ambient Rthj-amb 100 °C/W 3

CAD (KiCad official)

  • Symbol: bd140.kicad_sym
  • Footprint: bd140.kicad_mod
  • 3D model: TO-126 body from KiCad Package_TO_SOT_THT/TO-126-3_Vertical.
  • 3D model files: bd140-etched.step / bd140-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bd140.step / bd140.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (9 pp, sha256 9a72cdfa334700b8, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF