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MMBT2222ALT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmbt2222alt1gfactory-2.0.0extractor-text
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Contents

README

markdown

MMBT2222ALT1G

onsemi · Bipolar (BJT) · SOT-23

MMBT2222ALT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Transistor base (control input) terminal with maximum emitter-base voltage of 6.0 V
2 EMITTER passive Transistor emitter terminal; maximum continuous collector current 600 mA
3 COLLECTOR passive Transistor collector terminal with maximum collector-emitter voltage 40 V, maximum collector-base voltage 75 V, and maximum continuous collector current 600 mA

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage (MMBT2222AL column) VCEO 40 Vdc 1
Collector−Base Voltage (MMBT2222AL column) VCBO 75 Vdc 1
Emitter−Base Voltage (MMBT2222AL column) VEBO 6 Vdc 1
Collector Current − Continuous IC 600 mAdc 1
Collector Current − Peak ICM 1100 mAdc (Note 3) 1
Total Device Dissipation FR−5 Board PD 225 mW TA = 25°C (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C (Note 2) 1
Thermal Resistance, Junction−to−Ambient (FR−5 Board) RJA 556 °C/W FR−5 board (Note 1) 1
Thermal Resistance, Junction−to−Ambient (Alumina Substrate) RJA 417 °C/W Alumina substrate (Note 2) 1
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Collector−Emitter Breakdown Voltage (MMBT2222A) V(BR)CEO 40 Vdc IC = 10 mAdc, IB = 0 2
Collector−Base Breakdown Voltage (MMBT2222A) V(BR)CBO 75 Vdc IC = 10 Adc, IE = 0 2
Emitter−Base Breakdown Voltage (MMBT2222A) V(BR)EBO 6 Vdc IE = 10 Adc, IC = 0 2
Collector Cutoff Current (MMBT2222A) ICEX 10 nAdc VCE = 60 Vdc, VEB(off) = 3.0 Vdc 2
Collector Cutoff Current (MMBT2222A) ICBO 0.01 Adc VCB = 60 Vdc, IE = 0 2
Collector Cutoff Current (MMBT2222A, TA = 125°C) ICBO 10 Adc VCB = 60 Vdc, IE = 0, TA = 125°C 2
Emitter Cutoff Current (MMBT2222A) IEBO 100 nAdc VEB = 3.0 Vdc, IC = 0 2
Base Cutoff Current (MMBT2222A) IBL 20 nAdc VCE = 60 Vdc, VEB(off) = 3.0 Vdc 2
DC Current Gain (MMBT2222A) hFE 35 IC = 0.1 mAdc, VCE = 10 Vdc 2
DC Current Gain (MMBT2222A) hFE 50 IC = 1.0 mAdc, VCE = 10 Vdc 2
DC Current Gain (MMBT2222A) hFE 75 IC = 10 mAdc, VCE = 10 Vdc 2
DC Current Gain (MMBT2222A, TA = −55°C) hFE 35 IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C 2
DC Current Gain (MMBT2222A) hFE 100 300 IC = 150 mAdc, VCE = 10 Vdc (Note 4) 2
DC Current Gain (MMBT2222A) hFE 40 IC = 500 mAdc, VCE = 10 Vdc (Note 4) 2
Collector−Emitter Saturation Voltage (MMBT2222A) VCE(sat) 0.3 Vdc IC = 150 mAdc, IB = 15 mAdc 2
Collector−Emitter Saturation Voltage (MMBT2222A) VCE(sat) 1 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Base−Emitter Saturation Voltage (MMBT2222A) VBE(sat) 0.6 1.2 Vdc IC = 150 mAdc, IB = 15 mAdc 2
Base−Emitter Saturation Voltage (MMBT2222A) VBE(sat) 2 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Current−Gain − Bandwidth Product (MMBT2222A) fT 300 MHz IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz 2
Output Capacitance Cobo 8 pF VCB = 10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance (MMBT2222A) Cibo 25 pF VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz 2
Input Impedance (MMBT2222A) hie 2 8 k IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Input Impedance (MMBT2222A) hie 0.25 1.25 k IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Voltage Feedback Ratio (MMBT2222A) hre 8 X 10−4 IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Voltage Feedback Ratio (MMBT2222A) hre 4 X 10−4 IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Small−Signal Current Gain (MMBT2222A) hfe 50 300 IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Small−Signal Current Gain (MMBT2222A) hfe 75 375 IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 2
Output Admittance (MMBT2222A) hoe 5 35 mhos IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz 3
Output Admittance (MMBT2222A) hoe 25 200 mhos IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz 3
Collector Base Time Constant (MMBT2222A) rb, Cc 150 ps IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz 3
Noise Figure (MMBT2222A) NF 4 dB IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz 3
Delay Time (MMBT2222A only) td 10 ns VCC = 30 Vdc, VBE(off) = −0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc 3
Rise Time (MMBT2222A only) tr 25 ns 3
Storage Time (MMBT2222A only) ts 225 ns VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc 3
Fall Time (MMBT2222A only) tf 60 ns 3

CAD (KiCad official)

  • Symbol: MMBT2222ALT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbt2222alt1g-etched.step / mmbt2222alt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbt2222alt1g.step / mmbt2222alt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 f961fdb4e585c6bf, retrieved 2026-09-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF