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CI30N120SM4
Public Made by Adomby adom
Tokmas MOSFETs, TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCI30N120SM4
Tokmas · MOSFETs · TO-247-4L
CI30N120SM4 from Tokmas, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the SiC MOSFET; the datasheet rates V(BR)DSS at 1200 V minimum with VGS=0V and ID=100μA. |
| 2 | S | passive | Power source terminal of the SiC MOSFET; the datasheet rates continuous body diode forward current at 28 A with TC=25˚C. |
| 3 | KS | passive | Kelvin source terminal labeled KS on the package diagram; the datasheet does not state its separate function or limits. |
| 4 | G | input | Gate terminal of the SiC MOSFET; the datasheet gives threshold voltage 2.0 V to 4.0 V at 25˚C and switching drive of VGS=-5/20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-247-4L |
| Category | Transistors/Thyristors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS=0V,ID=100μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 2.4 | 4 | V | VGS= VDS, IDS=5mA,TC=25˚C | 2 |
| Gate Threshold Voltage | VGS(th) | 1.73 | V | VGS= VDS, IDS=5mA,TC=150˚C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 100 | μA | VDS= 1200V, VGS=0V | 2 | |
| Gate-Source Leakage Current | IGSS | 20 | 200 | nA | VGS=20V, VDS= 0V | 2 | |
| Drain-Source on-state Resistance | RDS(on) | 80 | 98 | mΩ | VGS=20V, ID=20A, TC=25˚C | 2 | |
| Drain-Source on-state Resistance | RDS(on) | 120 | mΩ | VGS=20V, ID=20A, TC=150˚C | 2 | ||
| Transconductance | gfs | 7 | S | VGS = 20 V, ID = 20A, TJ = 25 ˚C | 2 | ||
| Transconductance | gfs | 6.6 | S | VGS = 20 V, ID = 20A, TJ = 150 ˚C | 2 | ||
| Input Capacitance | Ciss | 2016 | pF | VGS=0V, VDS=1000 V, f=1MHz VAC=25 mV | 2 | ||
| Output Capacitance | Coss | 72.6 | pF | VGS=0V, VDS=1000 V, f=1MHz VAC=25 mV | 2 | ||
| Reverse Transfer Capacitance | Crss | 17.9 | pF | VGS=0V, VDS=1000 V, f=1MHz VAC=25 mV | 2 | ||
| Turn-On Switching Energy | EON | 180 | μJ | VDS=800V, VGS=-5/20V, ID= 20A, RG(ext) = 5Ω, L= 142 μH | 2 | ||
| Turn-Off Switching Energy | EOFF | 70 | μJ | VDS=800V, VGS=-5/20V, ID= 20A, RG(ext) = 5Ω, L= 142 μH | 2 | ||
| Turn-On Delay Time | td(on) | 23 | ns | VDD=800V, VGS=-5/20 V, ID = 20A, RG(ext) = 5 Ω , RL=40Ω , Timing relative to VDS | 2 | ||
| Rise Time | tr | 60 | ns | VDD=800V, VGS=-5/20 V, ID = 20A, RG(ext) = 5 Ω , RL=40Ω , Timing relative to VDS | 2 | ||
| Turn-Off Delay Time | td(off) | 17 | ns | VDD=800V, VGS=-5/20 V, ID = 20A, RG(ext) = 5 Ω , RL=40Ω , Timing relative to VDS | 2 | ||
| Fall Time | tf | 12 | ns | VDD=800V, VGS=-5/20 V, ID = 20A, RG(ext) = 5 Ω , RL=40Ω , Timing relative to VDS | 2 | ||
| Internal Gate Resistance | RG(int) | 2.8 | Ω | f=1 MHz, VAC=25mV | 2 | ||
| Gate to Source Charge | Qgs | 23 | nC | VDD=800V, VGS=-5/20 V, ID = 20A | 2 | ||
| Gate to Drain Charge | Qgd | 26 | nC | VDD=800V, VGS=-5/20 V, ID = 20A | 2 | ||
| Total Gate Charge | Qg | 85 | nC | VDD=800V, VGS=-5/20 V, ID = 20A | 2 | ||
| Diode Forward Voltage | VSD | 3.5 | V | VGS = -5V, ISD = 10 A, TJ = 25 °C | 2 | ||
| Diode Forward Voltage | VSD | 3.3 | V | VGS =- 5V, ISD = 10 A, TJ = 150 °C | 2 | ||
| Continuous Diode Forward Current | IS | 28 | A | TC = 25˚C | 2 | ||
| Reverse Recovery time | trr | 18 | ns | VGS = -5V, ISD = 20 A, VR= 800V, dif/dt=1200A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 80 | nC | VGS = -5V, ISD = 20 A, VR= 800V, dif/dt=1200A/μs | 2 | ||
| Peak Reverse Recovery Current | Irrm | 8 | A | 2 | |||
| Thermal Resistance from Junction to Case | RθJC | 0.75 | ℃/W | Fig. 11 | 2 | ||
| Thermal Resistance From Junction to Ambient | RθJA | 35 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
CI30N120SM4 - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files:
ci30n120sm4-etched.step/ci30n120sm4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ci30n120sm4.step/ci30n120sm4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (5 pp, sha256
0c77ada42e667103, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).