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Contents

README

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DON100N03

DOINGTER · MOSFETs · DFN5x6-8

DON100N03 from DOINGTER, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (one of three source pins, S S S G row on page 1 pinout drawing); VDS rating 30V.
2 S passive Source terminal of the N-channel MOSFET (one of three source pins); continuous drain current 100A at TC=25℃.
3 S passive Source terminal of the N-channel MOSFET (one of three source pins); gate-source voltage limit ±20V relative to this pin.
4 G input Gate terminal; gate-source voltage ±20V max, threshold 1 to 3V at ID=250μA, RDS(ON) <4mΩ at VGS=10V.
5 D passive Drain terminal (one of four drain pins tied to the drain pad); VDS 30V max, pulsed drain current 360A.
6 D passive Drain terminal (one of four drain pins tied to the drain pad); continuous drain current 100A at TC=25℃, 59A at TC=100℃.
7 D passive Drain terminal (one of four drain pins tied to the drain pad); VDS 30V max with IDSS 1μA max at VDS=30V.
8 D passive Drain terminal (one of four drain pins tied to the drain pad); package dissipates 83W at TC=25℃ with RθJC 1.5℃/W.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer DOINGTER
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 100 A TC=25℃ 1
Continuous Drain Current ID 59 A TC=100℃ 1
Pulsed Drain Current 360 A 1
Single Pulse Avalanche Energy EAS 250 mJ 1
Power Dissipation PD 83 W TC=25℃ 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance, Junction to Case RθJC 1.5 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=30V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 3 4 mΩ VGS=10V,ID=40A 2
Drain-Source On Resistance RDS(ON) 4.7 5.5 mΩ VGS=4.5V,ID=30A 2
Total Gate Charge Qg 44 84 nC VGS=10V, VDS=24V, ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V,IS=30A 2

CAD (KiCad official)

  • Symbol: DON100N03
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: don100n03-etched.step / don100n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); don100n03.step / don100n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 157e08195749eb5e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF