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MBT3946DW1T1G-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMBT3946DW1T1G-HXY
HXY MOSFET · Bipolar (BJT) · SOT-363
MBT3946DW1T1G-HXY from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (pin 1, marked with a dot on the package); VEBO limit is 5 V for the NPN and -5 V for the PNP. |
| 2 | B1 | passive | Base of transistor 1; emitter-base voltage is limited to 5 V in magnitude. |
| 3 | C2 | passive | Collector of transistor 2; collector current is limited to 200 mA in magnitude. |
| 4 | E2 | passive | Emitter of transistor 2; emitter-base voltage is limited to 5 V in magnitude. |
| 5 | B2 | passive | Base of transistor 2; emitter-base voltage is limited to 5 V in magnitude. |
| 6 | C1 | passive | Collector of transistor 1; collector current is limited to 200 mA, with VCEO of 40 V in magnitude. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage (NPN) | V(BR)CBO | 60 | V | IC=10µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage (NPN) | V(BR)CEO | 40 | V | IC=1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage (NPN) | V(BR)EBO | 5 | V | IE=10µA, IC=0 | 1 | ||
| Collector cut-off current (NPN) | ICEO | 50 | nA | VCE=30V, IB=0 | 1 | ||
| Emitter cut-off current (NPN) | IEBO | 50 | nA | VEB=5V, IC=0 | 1 | ||
| DC current gain (1) (NPN) | hFE(1) | 40 | VCE=1V, IC=100μA | 1 | |||
| DC current gain (2) (NPN) | hFE(2) | 70 | VCE=1V, IC=1mA | 1 | |||
| DC current gain (3) (NPN) | hFE(3) | 100 | 300 | VCE=1V, IC=10mA | 1 | ||
| DC current gain (4) (NPN) | hFE(4) | 60 | VCE=1V, IC=50mA | 1 | |||
| DC current gain (5) (NPN) | hFE(5) | 30 | VCE=1V, IC=100mA | 1 | |||
| Collector-emitter saturation voltage (NPN) | VCE(sat) | 0.2 | V | IC=10mA, IB=1mA | 1 | ||
| Collector-emitter saturation voltage (NPN) | VCE(sat) | 0.3 | V | IC=50mA, IB=5mA | 1 | ||
| Base-emitter saturation voltage (NPN) | VBE(sat) | 0.65 | 0.85 | V | IC=10mA, IB=1mA | 1 | |
| Base-emitter saturation voltage (NPN) | VBE(sat) | 0.95 | V | IC=50mA, IB=5mA | 1 | ||
| Transition frequency (NPN) | fT | 300 | MHz | VCE=20V, IC=10mA, f=100MHz | 1 | ||
| Collector output capacitance (NPN) | Cob | 4 | pF | VCB=5V, IE=0, f=1MHz | 1 | ||
| Noise figure (NPN) | NF | 5 | dB | VCE=5V, Ic=0.1mA, f=1kHz, Rg=1KΩ | 1 | ||
| Delay time (NPN) | td | 35 | ns | VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=IB2=1mA | 1 | ||
| Rise time (NPN) | tr | 35 | ns | 1 | |||
| Storage time (NPN) | ts | 225 | ns | VCC=3V, IC=10mA, IB1=IB2=1mA | 1 | ||
| Fall time (NPN) | tf | 75 | ns | 1 | |||
| Collector-base breakdown voltage (PNP) | V(BR)CBO* | -40 | V | IC=-10µA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage (PNP) | V(BR)CEO* | -40 | V | IC=-1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage (PNP) | V(BR)EBO* | -5 | V | IE=-10µA, IC=0 | 2 | ||
| Collector cut-off current (PNP) | ICEX* | -50 | nA | VCE=-30V, VEB(off)=-3V | 2 | ||
| Base cut-off current (PNP) | IEBO | -50 | nA | VEB=-5V, IE=0 | 2 | ||
| DC current gain (1) (PNP) | hFE(1)* | 60 | VCE=-1V, IC=-100μA | 2 | |||
| DC current gain (2) (PNP) | hFE(2)* | 80 | VCE=-1V, IC=-1mA | 2 | |||
| DC current gain (3) (PNP) | hFE(3)* | 100 | 300 | VCE=-1V, IC=-10mA | 2 | ||
| DC current gain (4) (PNP) | hFE(4)* | 60 | VCE=-1V, IC=-50mA | 2 | |||
| DC current gain (5) (PNP) | hFE(5)* | 30 | VCE=-1V, IC=-100mA | 2 | |||
| Collector-emitter saturation voltage (PNP) | VCE(sat)* | -0.25 | V | IC=-10mA, IB=-1mA | 2 | ||
| Collector-emitter saturation voltage (PNP) | VCE(sat)* | -0.4 | V | IC=-50mA, IB=-5mA | 2 | ||
| Base-emitter saturation voltage (PNP) | VBE(sat)* | -0.65 | -0.85 | V | IC=-10mA, IB=-1mA | 2 | |
| Base-emitter saturation voltage (PNP) | VBE(sat)* | -0.95 | V | IC=-50mA, IB=-5mA | 2 | ||
| Transition frequency (PNP) | fT | 250 | MHz | VCE=-20V, IC=-10mA, f=100MHz | 2 | ||
| Collector output capacitance (PNP) | Cob | 4.5 | pF | VCB=-5V, IE=0, f=1MHz | 2 | ||
| Noise figure (PNP) | NF | 4 | dB | VCE=-5V, Ic=-0.1mA, f=1kHz, Rg=1KΩ | 2 | ||
| Delay time (PNP) | td | 35 | ns | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA | 2 | ||
| Rise time (PNP) | tr | 35 | ns | 2 | |||
| Storage time (PNP) | ts | 225 | ns | VCC=-3V, IC=-10mA, IB1=IB2=-1mA | 2 | ||
| Fall time (PNP) | tf | 75 | ns | 2 | |||
| Collector-base voltage (NPN, absolute maximum) | VCBO | 60 | V | 1 | |||
| Collector-emitter voltage (NPN, absolute maximum) | VCEO | 40 | V | 1 | |||
| Emitter-base voltage (NPN, absolute maximum) | VEBO | 5 | V | 1 | |||
| Collector current (NPN, absolute maximum) | IC | 200 | mA | 1 | |||
| Collector power dissipation (NPN, absolute maximum) | PC | 200 | mW | 1 | |||
| Thermal resistance junction to ambient (NPN) | RΘJA | 625 | °C/W | 1 | |||
| Operation junction and storage temperature range (NPN) | TJ,Tstg | -55 | 150 | °C | 1 | ||
| Collector-base voltage (PNP, absolute maximum) | VCBO | -40 | V | 2 | |||
| Collector-emitter voltage (PNP, absolute maximum) | VCEO | -40 | V | 2 | |||
| Emitter-base voltage (PNP, absolute maximum) | VEBO | -5 | V | 2 | |||
| Collector current (PNP, absolute maximum) | IC | -200 | mA | 2 | |||
| Collector power dissipation (PNP, absolute maximum) | PC | 200 | mW | 2 | |||
| Thermal resistance junction to ambient (PNP) | RΘJA | 625 | °C/W | 2 | |||
| Operation junction and storage temperature range (PNP) | TJ,Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
MBT3946DW1T1G-HXY - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mbt3946dw1t1g-hxy-etched.step/mbt3946dw1t1g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mbt3946dw1t1g-hxy.step/mbt3946dw1t1g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
abc5c1d44094c418, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).