component

MMBTA13LT3G

Public Made by Adom

by adom

onsemi Darlington Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistormmbta13lt3gfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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MMBTA13LT3G

onsemi · Darlington Transistors · SOT-23

MMBTA13LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN Darlington transistor, whose maximum ratings are VCES 30 Vdc, VEBO 10 Vdc and continuous collector current 300 mAdc.
2 EMITTER passive Emitter terminal of the NPN Darlington transistor, with emitter-base voltage limited to VEBO 10 Vdc.
3 COLLECTOR passive Collector terminal of the NPN Darlington transistor, with collector-emitter voltage limited to VCES 30 Vdc and continuous collector current 300 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 30 Vdc 1
Collector-Base Voltage VCBO 30 Vdc 1
Emitter-Base Voltage VEBO 10 Vdc 1
Collector Current - Continuous IC 300 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR-5 Board, TA = 25°C PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Derate above 25°C, FR-5 Board PD 1.8 mW/°C FR-5 Board (Note 1), derate above 25°C 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation Alumina Substrate, TA = 25°C PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Derate above 25°C, Alumina Substrate PD 2.4 mW/°C Alumina Substrate (Note 2), derate above 25°C 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RJA 417 °C/W Alumina Substrate (Note 2) 1
Collector-Emitter Breakdown Voltage V(BR)CES 30 Vdc IC = 100 Adc, VBE = 0 2
Collector Cutoff Current ICBO 100 nAdc VCB = 30 Vdc, IE = 0 2
Emitter Cutoff Current IEBO 100 nAdc VEB = 10 Vdc, IC = 0 2
DC Current Gain, MMBTA13 hFE 5000 IC = 10 mAdc, VCE = 5.0 Vdc 2
DC Current Gain, MMBTA13 hFE 10000 IC = 100 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 1.5 Vdc IC = 100 mAdc, IB = 0.1 mAdc 2
Base-Emitter On Voltage VBE 2 Vdc IC = 100 mAdc, VCE = 5.0 Vdc 2
Current-Gain - Bandwidth Product fT 125 MHz IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz 2

CAD (KiCad official)

  • Symbol: MMBTA13LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbta13lt3g-etched.step / mmbta13lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbta13lt3g.step / mmbta13lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 1a75824d9d272eef, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF