component
SI2310AI-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI2310AI-MS
MSKSEMI · MOSFETs · SOT-23
SI2310AI-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; VGS is limited to ±20 V per the absolute maximum ratings, and the device is specified for gate drive as low as 4.5 V. |
| 2 | D | passive | Drain terminal; VDS is rated up to 60 V and continuous drain current is rated at 3 A. |
| 3 | S | passive | Source terminal; it is the reference for VGS and the body diode forward current is rated at 3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current-Continuous | ID | 3 | A | 2 | |||
| Drain Current-Pulsed | IDM | 10 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 2 | ||
| Maximum Power Dissipation | PD | 1.7 | W | 2 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 73.5 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.3 | 2 | V | VDS=VGS, ID=250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | 66 | 86 | mΩ | VGS=10V, ID=3A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 89 | 115 | mΩ | VGS=4.5V, ID=1.5A | 3 | |
| Forward Transconductance | gFS | 3 | S | VDS=15V, ID=2A | 3 | ||
| Diode Forward Voltage (Note 3) | VSD | 1.2 | V | VGS=0V, IS=3A | 3 | ||
| Diode Forward Current (Note 2) | IS | 3 | A | 3 |
CAD (KiCad official)
- Symbol:
SI2310AI-MS - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
si2310ai-ms-etched.step/si2310ai-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si2310ai-ms.step/si2310ai-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (8 pp, sha256
7cdde958fe944a87, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).