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BSS84Q-7-F-VB
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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownBSS84Q-7-F-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
BSS84Q-7-F-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±20 V and a threshold of -1 to -3 V. |
| 2 | S | passive | Source of the P-channel MOSFET, used for high-side switching with drain-source voltage rated to -60 V. |
| 3 | D | passive | Drain of the P-channel MOSFET, with continuous drain current of -500 mA at TA = 25 °C and drain-source voltage of -60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | -500 | mA | TA = 25 °C | 1 | ||
| Continuous Drain Current | ID | -350 | mA | TA = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -1500 | mA | Pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 460 | mW | TA = 25 °C | 1 | ||
| Power Dissipation | PD | 240 | mW | TA = 100 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | 350 | °C/W | Surface mounted on FR4 board | 1 | ||
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = -10 µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -3 | -1 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | 10 | µA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Gate-Body Leakage | IGSS | 200 | nA | VDS = 0 V, VGS = ±10 V | 2 | ||
| Gate-Body Leakage | IGSS | 500 | nA | VDS = 0 V, VGS = ±10 V, TJ = 85 °C | 2 | ||
| Gate-Body Leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ±5 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -25 | nA | VDS = -60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -250 | nA | VDS = -60 V, VGS = 0 V, TJ = 85 °C | 2 | ||
| On-State Drain Current | ID(on) | -50 | mA | VGS = -10 V, VDS = -4.5 V | 2 | ||
| On-State Drain Current | ID(on) | -600 | mA | VGS = -10 V, VDS = -10 V | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 4 | Ω | VGS = -4.5 V, ID = -25 mA | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 3 | Ω | VGS = -10 V, ID = -100 mA | 2 | ||
| Drain-Source On-Resistance | RDS(on) | 9 | Ω | VGS = -10 V, ID = -100 mA, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 80 | mS | VDS = -10 V, ID = -100 mA | 2 | ||
| Diode Forward Voltage | VSD | -1.4 | V | IS = -100 mA, VGS = 0 V | 2 | ||
| Total Gate Charge | Qg | 2 | nC | VDS = -30 V, VGS = -15 V, ID ≈ -100 mA | 2 | ||
| Gate-Source Charge | Qgs | 1.2 | nC | VDS = -30 V, VGS = -15 V, ID ≈ -100 mA | 2 | ||
| Gate-Drain Charge | Qgd | 0.8 | nC | VDS = -30 V, VGS = -15 V, ID ≈ -100 mA | 2 | ||
| Input Capacitance | Ciss | 23 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 10 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | VDS = -25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Turn-On Time | td(on) | 20 | ns | VDD = -25 V, RL = 150 Ω, ID ≈ -200 mA, VGEN = -10 V, Rg = 10 Ω | 2 | ||
| Turn-Off Time | td(off) | 35 | ns | VDD = -25 V, RL = 150 Ω, ID ≈ -200 mA, VGEN = -10 V, Rg = 10 Ω | 2 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
BSS84Q-7-F-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
bss84q-7-f-vb-etched.step/bss84q-7-f-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss84q-7-f-vb.step/bss84q-7-f-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
12b1d0b1aa0dd1cb, retrieved 2026-11-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).