component
PM2301
Public Made by Adomby adom
PN SILICON MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPM2301
PN SILICON · MOSFETs · SOT-23
PM2301 from PN SILICON, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V, with threshold VGS(th) of -0.4 V min to -1.1 V max at ID = -250 µA. |
| 2 | S | passive | Source; continuous source (body diode) current is -0.59 A max. |
| 3 | D | passive | Drain; drain-source voltage is -20 V max, with continuous drain current of -2.8 A and pulsed drain current of -12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PN SILICON |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source threshold voltage | VGS(th) | -0.4 | -0.7 | -1.1 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-source on-resistance (VGS=-4.5V) | RDS(on) | 103 | mΩ | VGS=-4.5V, ID=-2.8A | 2 | ||
| Drain-source on-resistance (VGS=-2.5V) | RDS(on) | 140 | mΩ | VGS=-2.5V, ID=-2A | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS=0V, ID=-250µA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | µA | VDS=-16V, VGS=0V | 2 | ||
| Forward transconductance | gFS | 3 | S | VDS=-5V, ID=-3.3A | 2 | ||
| Drain-source voltage | VDS | -20 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-source voltage | VGS | -12 | 12 | V | TA=25°C unless otherwise noted | 1 | |
| Continuous drain current | ID | -2.8 | A | TA=25°C unless otherwise noted | 1 | ||
| Pulsed drain current | IDM | -12 | A | TA=25°C unless otherwise noted | 1 | ||
| Continuous drain current (source/diode) | IS | -0.59 | A | TA=25°C unless otherwise noted | 1 | ||
| Power dissipation | PD | 0.35 | W | TA=25°C unless otherwise noted | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 357 | ℃/W | 1 | |||
| Junction temperature | TJ | 150 | ℃ | TA=25°C unless otherwise noted | 1 |
CAD (KiCad official)
- Symbol:
PM2301 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
pm2301-etched.step/pm2301-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);pm2301.step/pm2301.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PN SILICON datasheet (4 pp, sha256
276e5d19a18f1db2, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).