component
S-LBC817-25DMT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS-LBC817-25DMT1G
LRC · Bipolar (BJT) · SOT-23-6
S-LBC817-25DMT1G from LRC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor Q1 (NPN); Q1 VCEO 45 V, IC 500 mAdc continuous. |
| 2 | B1 | passive | Base of transistor Q1; VEBO max 5.0 V. |
| 3 | C2 | passive | Collector of transistor Q2 (NPN); VCEO 45 V, VCBO 50 V, IC 500 mAdc continuous. |
| 4 | E2 | passive | Emitter of transistor Q2 (NPN); VEBO max 5.0 V. |
| 5 | B2 | passive | Base of transistor Q2; VBE(on) max 1.2 V at IC = 500 mA, VCE = 1.0 V. |
| 6 | C1 | passive | Collector of transistor Q1 (NPN); VCEO 45 V, VCBO 50 V, IC 500 mAdc continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | V | IC = -10 mA | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CES | 50 | V | VEB = 0, IC = -10 µA | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE = -1.0 µA | 1 | ||
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 20 V | 1 | ||
| Collector Cutoff Current | ICBO | 5 | µA | VCB = 20 V, TA = 150°C | 1 | ||
| DC Current Gain (LBC817-25) | hFE | 160 | 400 | IC = 100 mA, VCE = 1.0 V | 2 | ||
| DC Current Gain | hFE | 40 | IC = 500 mA, VCE = 1.0 V | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.7 | V | IC = 500 mA, IB = 50 mA | 2 | ||
| Base-Emitter On Voltage | VBE(on) | 1.2 | V | IC = 500 mA, VCE = 1.0 V | 2 | ||
| Current-Gain, Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 5.0 V dc, f = 100 MHz | 2 | ||
| Collector-Emitter Voltage | VCEO | 45 | V | 1 | |||
| Collector-Base Voltage | VCBO | 50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current, Continuous | IC | 500 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (FR-5 Board) | PD | 370 | mW | FR-5 board, TA = 25°C | 1 | ||
| Derate above 25°C (FR-5 Board) | PD | 3 | mW/°C | FR-5 board, derate above 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (FR-5 Board) | RθJA | 333 | °C/W | FR-5 board | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 600 | mW | Alumina substrate, TA = 25°C | 1 | ||
| Derate above 25°C (Alumina Substrate) | PD | 4.8 | mW/°C | Alumina substrate, derate above 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RθJA | 208 | °C/W | Alumina substrate | 1 |
CAD (KiCad official)
- Symbol:
S-LBC817-25DMT1G - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
s-lbc817-25dmt1g-etched.step/s-lbc817-25dmt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s-lbc817-25dmt1g.step/s-lbc817-25dmt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (4 pp, sha256
0467e22c2c792b03, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).