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Contents

README

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AGM312ME

AGM-Semi · MOSFETs · SOT-23-6

AGM312ME from AGM-Semi, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the N-channel MOSFET (Q1, 30V, 5.5A), with VGS rated ±12V and threshold 0.5 to 1.3V.
2 S2 passive Source of the P-channel MOSFET (Q2, -30V, -4.4A).
3 G2 input Gate of the P-channel MOSFET (Q2), with VGS rated ±12V and threshold -0.5 to -1.3V.
4 D2 passive Drain of the P-channel MOSFET (Q2), with VDS rated -30V.
5 S1 passive Source of the N-channel MOSFET (Q1).
6 D1 passive Drain of the N-channel MOSFET (Q1), with VDS rated 30V.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOT-23-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Ch Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
N-Ch Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
N-Ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
N-Ch Gate Threshold Voltage VGS(th) 0.5 1.3 V VDS=VGS,ID=250μA 2
N-Ch Drain-Source On-State Resistance RDS(on) 24 30 mΩ VGS=10V, ID=4.2A 2
N-Ch Drain-Source On-State Resistance RDS(on) 26 35 mΩ VGS=4.5V, ID=4A 2
N-Ch Source-Drain Current (Body Diode) ISD 5.5 A 2
N-Ch Forward on Voltage VSD 0.7 0.95 V VGS=0V,IS=4A 2
P-Ch Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 3
P-Ch Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 3
P-Ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 3
P-Ch Gate Threshold Voltage VGS(th) -0.5 -1.3 V VDS=VGS,ID=-250μA 3
P-Ch Drain-Source On-State Resistance RDS(on) 38 50 mΩ VGS=-10V, ID=-4.2A 3
P-Ch Drain-Source On-State Resistance RDS(on) 45 55 mΩ VGS=-4.5V, ID=-4A 3
P-Ch Source-Drain Current (Body Diode) ISD -4.4 A 3
P-Ch Forward on Voltage VSD -0.7 -1 V VGS=0V, IS=-4A 3
N-Ch Drain-Source Voltage VDS 30 V VGS=0V, TA=25℃ 1
P-Ch Drain-Source Voltage VDS -30 V VGS=0V, TA=25℃ 1
N-Ch Gate-Source Voltage VGS -12 12 V VDS=0V 1
P-Ch Gate-Source Voltage VGS -12 12 V VDS=0V 1
N-Ch Drain Current-Continuous ID 5.5 A TA=25℃ 1
N-Ch Drain Current-Continuous ID 3.3 A TA=100℃ 1
P-Ch Drain Current-Continuous ID -4.4 A TA=25℃ 1
P-Ch Drain Current-Continuous ID -2.6 A TA=100℃ 1
P-Ch Drain Current-Pulsed IDM -17.6 A 1
Total Power Dissipation PD 1 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W Steady State 1
N-Ch Forward Transconductance gFS 8 S VDS=5V,ID=5A 2
N-Ch Input Capacitance Ciss 390 pF VDS=15V,VGS=0V, F=1MHZ 2
N-Ch Gate resistance Rg 3 Ω VGS=0V, VDS=0V,f=1.0MHz 2
N-Ch Total Gate Charge Qg 4.5 nC VGS=10V, VDS=15V, ID=4A 2
P-Ch Forward Transconductance gFS 8 S VDS=-5V,ID=-4A 3
P-Ch Input Capacitance Ciss 409 pF VDS=-15V,VGS=0V, F=1MHZ 3
P-Ch Gate resistance Rg 12 Ω VGS=0V, VDS=-0V,f=1.0MHz 3
P-Ch Total Gate Charge Qg 4.8 nC VGS=-10V, VDS=-15V, ID=-4A 3

CAD (KiCad official)

  • Symbol: AGM312ME
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: agm312me-etched.step / agm312me-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm312me.step / agm312me.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (10 pp, sha256 3433b222d1a97e62, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF