component
MMBT9012G-I-AE3-R
Public Made by Adomby adom
UTC Unisonic Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT9012G-I-AE3-R
UTC Unisonic Tech · Bipolar (BJT) · SOT-23
MMBT9012G-I-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor, rated for emitter-base voltage VEBO of -5 V and emitter-base breakdown BVEBO of -5 V at IE = -100 µA. |
| 2 | B | passive | Base of the PNP transistor, with base-emitter on voltage VBE(on) of -0.6 V to -0.7 V at VCE = -1 V and IC = -10 mA and base-emitter saturation voltage VBE(sat) of -1.2 V max at IC = -500 mA and IB = -50 mA. |
| 3 | C | passive | Collector of the PNP transistor, rated for collector-emitter voltage VCEO of -20 V, collector-base voltage VCBO of -40 V, collector current IC of -500 mA, and collector dissipation PC of 225 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -40 | V | 2 | |||
| Collector-emitter voltage | VCEO | -20 | V | 2 | |||
| Emitter-base voltage | VEBO | -5 | V | 2 | |||
| Collector current | IC | -500 | mA | 2 | |||
| Collector dissipation | PC | 225 | mW | 2 | |||
| Junction temperature | TJ | 150 | C | 2 | |||
| Storage temperature | TSTG | -55 | 150 | C | 2 | ||
| Collector-base breakdown voltage | BVCBO | -40 | V | IC= -100μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | -20 | V | IC= -1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -5 | V | IE= -100μA, IC=0 | 2 | ||
| Collector cutoff current | ICBO | -100 | nA | VCB= -25V, IE=0 | 2 | ||
| Emitter cutoff current | IEBO | -100 | nA | VEB= -3V, IC=0 | 2 | ||
| DC current gain hFE1 | hFE1 | 64 | 120 | 300 | VCE= -1V, IC= -50mA | 2 | |
| DC current gain hFE2 | hFE2 | 40 | VCE= -1V, IC= -500mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.18 | -0.6 | V | IC= -500mA, IB= -50mA | 2 | |
| Base-emitter saturation voltage | VBE(sat) | -0.95 | -1.2 | V | IC= -500mA, IB= -50mA | 2 | |
| Base-emitter on voltage | VBE(on) | -0.6 | -0.67 | -0.7 | V | VCE=-1V, IC= -10mA | 2 |
CAD (KiCad official)
- Symbol:
MMBT9012G-I-AE3-R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt9012g-i-ae3-r-etched.step/mmbt9012g-i-ae3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt9012g-i-ae3-r.step/mmbt9012g-i-ae3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (3 pp, sha256
b2299bbd752b6537, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).