component
2N7002X
Public Made by Adomby adom
Shenzhen JingYang MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N7002X
Shenzhen JingYang · MOSFETs · SOT-23
2N7002X from Shenzhen JingYang, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V absolute maximum, with threshold of 1 V min to 2.5 V max at ID=250 µA. |
| 2 | S | passive | Source; the pin drain-source voltage and gate-source voltage are referenced to, with body-diode forward current IS up to 0.115 A. |
| 3 | D | passive | Drain; drain-source voltage rated 60 V maximum, continuous drain current 0.3 A and pulsed 0.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 0.3 | A | TC=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 0.8 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 0.85 | W | TC=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 145 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | 67 | V | VGS=0V ID=250μA | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 1.3 | 3 | Ω | VGS=4.5V, ID=0.2A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 1.2 | 2.5 | Ω | VGS=10V, ID=0.3A | 2 | |
| Forward Transconductance | gFS | 0.08 | S | VDS=10V,ID=0.2A | 2 | ||
| Input Capacitance | Clss | 20 | 50 | PF | 2 | ||
| Output Capacitance | Coss | 10 | 25 | PF | 2 | ||
| Reverse Transfer Capacitance | Crss | 3.6 | 5 | PF | VDS=30V,VGS=0V, F=1.0MHz | 2 | |
| Total Gate Charge | Qg | 1.7 | 3 | nC | VDS=10V,ID=0.115A, VGS=4.5V | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=0.115A | 2 | ||
| Diode Forward Current | IS | 0.115 | A | 2 |
CAD (KiCad official)
- Symbol:
2N7002X - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2n7002x-etched.step/2n7002x-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n7002x.step/2n7002x.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (6 pp, sha256
d77d5149a1898a87, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).