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README

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74HC03D

Nexperia · Logic Gates · SOIC-14

74HC03D from Nexperia, in a SOIC-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1A input Data input A of NAND gate 1; input voltage must stay between 0 V and VCC, and clamp diodes limit input current to ±20 mA when the input is beyond the rails by 0.5 V.
2 1B input Data input B of NAND gate 1; input voltage must stay between 0 V and VCC, and clamp diodes limit input current to ±20 mA when the input is beyond the rails by 0.5 V.
3 1Y output Open-drain output of NAND gate 1 that pulls LOW when both inputs are HIGH and is high-impedance otherwise; output voltage is limited to -0.5 V to +7 V and output current to -25 mA.
4 2A input Data input A of NAND gate 2; input voltage must stay between 0 V and VCC, and clamp diodes limit input current to ±20 mA when the input is beyond the rails by 0.5 V.
5 2B input Data input B of NAND gate 2; input voltage must stay between 0 V and VCC, and clamp diodes limit input current to ±20 mA when the input is beyond the rails by 0.5 V.
6 2Y output Open-drain output of NAND gate 2 that pulls LOW when both inputs are HIGH and is high-impedance otherwise; output voltage is limited to -0.5 V to +7 V and output current to -25 mA.
7 GND power_in Ground reference (0 V) for all voltages in the device.
8 3Y output Open-drain output of NAND gate 3 that pulls LOW when both inputs are HIGH and is high-impedance otherwise; output voltage is limited to -0.5 V to +7 V and output current to -25 mA.
9 3A input Data input A of NAND gate 3; input voltage must stay between 0 V and VCC, and clamp diodes limit input current to ±20 mA when the input is beyond the rails by 0.5 V.
10 3B input Data input B of NAND gate 3; input voltage must stay between 0 V and VCC, and clamp diodes limit input current to ±20 mA when the input is beyond the rails by 0.5 V.
11 4Y output Open-drain output of NAND gate 4 that pulls LOW when both inputs are HIGH and is high-impedance otherwise; output voltage is limited to -0.5 V to +7 V and output current to -25 mA.
12 4A input Data input A of NAND gate 4; input voltage must stay between 0 V and VCC, and clamp diodes limit input current to ±20 mA when the input is beyond the rails by 0.5 V.
13 4B input Data input B of NAND gate 4; input voltage must stay between 0 V and VCC, and clamp diodes limit input current to ±20 mA when the input is beyond the rails by 0.5 V.
14 VCC power_in Supply voltage; 2.0 V to 6.0 V for 74HC03 and 4.5 V to 5.5 V for 74HCT03.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOIC-14
Category Logic
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VCC supply voltage VCC 2 5 6 V 3
input voltage VI 0 V 3
output voltage VO 0 V 3
ambient temperature Tamb -40 25 125 °C 3
input transition rise and fall rate Δt/ΔV 625 ns/V VCC = 2.0 V 3
input transition rise and fall rate Δt/ΔV 1.67 139 ns/V VCC = 4.5 V 3
input transition rise and fall rate Δt/ΔV 83 ns/V VCC = 6.0 V 3
supply voltage VCC -0.5 7 V 3
output voltage VO -0.5 7 V 3
input clamping current IIK -20 20 mA VI < -0.5 V or VI > VCC + 0.5 V 3
output clamping current IOK -20 mA VO < -0.5 V 3
output current IO -25 mA -0.5 V < VO 3
supply current ICC 50 mA 3
ground current IGND -50 mA 3
storage temperature Tstg -65 150 °C 3
total power dissipation Ptot 500 mW 3
HIGH-level input voltage VIH 1.5 1.2 V 25 °C; VCC = 2.0 V 4
HIGH-level input voltage VIH 1.5 V -40 °C to +125 °C; VCC = 2.0 V 4
HIGH-level input voltage VIH 3.15 2.4 V 25 °C; VCC = 4.5 V 4
HIGH-level input voltage VIH 3.15 V -40 °C to +125 °C; VCC = 4.5 V 4
HIGH-level input voltage VIH 4.2 3.2 V 25 °C; VCC = 6.0 V 4
HIGH-level input voltage VIH 4.2 V -40 °C to +125 °C; VCC = 6.0 V 4
LOW-level input voltage VIL 0.8 0.5 V 25 °C; VCC = 2.0 V 4
LOW-level input voltage VIL 0.5 V -40 °C to +125 °C; VCC = 2.0 V 4
LOW-level input voltage VIL 2.1 1.35 V 25 °C; VCC = 4.5 V 4
LOW-level input voltage VIL 1.35 V -40 °C to +125 °C; VCC = 4.5 V 4
LOW-level input voltage VIL 2.8 1.8 V 25 °C; VCC = 6.0 V 4
LOW-level input voltage VIL 1.8 V -40 °C to +125 °C; VCC = 6.0 V 4
LOW-level output voltage VOL 0 0.1 V VI = VIH or VIL; IO = 20 μA; VCC = 2.0 V; 25 °C 4
LOW-level output voltage VOL 0.1 V VI = VIH or VIL; IO = 20 μA; VCC = 2.0 V; -40 °C to +125 °C 4
LOW-level output voltage VOL 0.15 0.26 V VI = VIH or VIL; IO = 4.0 mA; VCC = 4.5 V; 25 °C 4
LOW-level output voltage VOL 0.4 V VI = VIH or VIL; IO = 4.0 mA; VCC = 4.5 V; -40 °C to +125 °C 4
LOW-level output voltage VOL 0.16 0.26 V VI = VIH or VIL; IO = 5.2 mA; VCC = 6.0 V; 25 °C 4
input leakage current II -1 1 μA VI = VCC or GND; VCC = 6.0 V; -40 °C to +125 °C 4
OFF-state output current IOZ -0.5 0.5 μA VI = VIL; VCC = 6.0 V; VO = VCC or GND; 25 °C 4
OFF-state output current IOZ -10 10 μA VI = VIL; VCC = 6.0 V; VO = VCC or GND; -40 °C to +125 °C 4
supply current ICC 40 μA VI = VCC or GND; IO = 0 A; VCC = 6.0 V; -40 °C to +125 °C 4
propagation delay tpd 28 95 ns nA, nB to nY; CL = 50 pF; see Fig. 4; VCC = 2.0 V; 25 °C 5
propagation delay tpd 145 ns nA, nB to nY; CL = 50 pF; see Fig. 4; VCC = 2.0 V; -40 °C to +125 °C 5
propagation delay tpd 10 19 ns nA, nB to nY; CL = 50 pF; see Fig. 4; VCC = 4.5 V; 25 °C 5
propagation delay tpd 29 ns nA, nB to nY; CL = 50 pF; see Fig. 4; VCC = 4.5 V; -40 °C to +125 °C 5
propagation delay tpd 8 16 ns nA, nB to nY; CL = 50 pF; see Fig. 4; VCC = 6.0 V; 25 °C 5
propagation delay tpd 25 ns nA, nB to nY; CL = 50 pF; see Fig. 4; VCC = 6.0 V; -40 °C to +125 °C 5
transition time tt 19 75 ns CL = 50 pF; see Fig. 4; VCC = 2.0 V; 25 °C 5
transition time tt 110 ns CL = 50 pF; see Fig. 4; VCC = 2.0 V; -40 °C to +125 °C 5
transition time tt 7 15 ns CL = 50 pF; see Fig. 4; VCC = 4.5 V; 25 °C 5
transition time tt 22 ns CL = 50 pF; see Fig. 4; VCC = 4.5 V; -40 °C to +125 °C 5
transition time tt 6 13 ns CL = 50 pF; see Fig. 4; VCC = 6.0 V; 25 °C 5
transition time tt 19 ns CL = 50 pF; see Fig. 4; VCC = 6.0 V; -40 °C to +125 °C 5

CAD (KiCad official)

  • Symbol: 74HC03D
  • Footprint: Package_SO:SOIC-14_3.9x8.7mm_P1.27mm
  • 3D model: SOIC-14 (KiCad packages3D, STEP)
  • 3D model files: 74hc03d-etched.step / 74hc03d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 74hc03d.step / 74hc03d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 0f83483437aa5fc1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF