component
BCR 505 E6327
Public Made by Adomby adom
Infineon Technologies Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCR 505 E6327
Infineon Technologies · Digital Transistors · SOT-23
BCR 505 E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN digital transistor, with built-in bias resistors R1 = 2.2 kΩ and R2 = 10 kΩ; input forward voltage Vi(fwd) is 20 V maximum and input reverse voltage Vi(rev) is 5 V maximum. |
| 2 | E | passive | Emitter terminal of the NPN transistor; device maximum ratings include collector-emitter voltage VCEO of 50 V and collector current IC of 500 mA. |
| 3 | C | passive | Collector terminal of the NPN transistor; collector-base voltage VCBO is 50 V and total power dissipation Ptot is 330 mW at TS ≤ 79 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC = 100 µA, IB = 0 | 2 | ||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | IC = 10 µA, IE = 0 | 2 | ||
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 50 V, IE = 0 | 2 | ||
| Emitter-base cutoff current | IEBO | 0.65 | mA | VEB = 5 V, IC = 0 | 2 | ||
| DC current gain | hFE | 70 | - | IC = 50 mA, VCE = 5 V | 2 | ||
| Collector-emitter saturation voltage | VCEsat | 0.3 | V | IC = 50 mA, IB = 2.5 mA | 2 | ||
| Input off voltage | Vi(off) | 0.4 | 1 | V | IC = 100 µA, VCE = 5 V | 2 | |
| Input on voltage | Vi(on) | 0.5 | 1.4 | V | IC = 10 mA, VCE = 0.3 V | 2 | |
| Input resistor R1 | R1 | 1.5 | 2.2 | 2.9 | kΩ | 2 | |
| Resistor ratio R1/R2 | R1/R2 | 0.19 | 0.22 | 0.24 | - | 2 | |
| Collector-emitter voltage | VCEO | 50 | V | 1 | |||
| Collector-base voltage | VCBO | 50 | V | 1 | |||
| Input forward voltage | Vi(fwd) | 20 | 1 | ||||
| Input reverse voltage | Vi(rev) | 5 | 1 | ||||
| Collector current | IC | 500 | mA | 1 | |||
| Total power dissipation | Ptot | 330 | mW | TS ≤ 79 °C | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 1 | ||
| Junction - soldering point thermal resistance | RthJS | 215 | K/W | Junction - soldering point | 1 |
CAD (KiCad official)
- Symbol:
BCR 505 E6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bcr-505-e6327-etched.step/bcr-505-e6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcr-505-e6327.step/bcr-505-e6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (6 pp, sha256
dba340fa4ce9b5c3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).