component
KIA5N50SD
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKIA5N50SD
KIA Semicon Tech · MOSFETs · TO-252
KIA5N50SD from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet limits the gate-to-source voltage to ±30 V (VGSS). |
| 2 | Drain | passive | Drain terminal, rated for a drain-to-source voltage of 500 V (VDSS) with 5 A continuous drain current and 15 A pulsed drain current at TC=25 °C. |
| 3 | Source | passive | Source terminal, the reference for the gate-to-source voltage (±30 V max); the body diode has a forward voltage of 1.5 V max at IS=2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V, ID=250uA | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=500V, VGS=0V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±30V, VDS=0V | 3 | |
| Drain-to-Source ON Resistance | RDS(ON) | 1.38 | 1.55 | Ω | VGS=10V, ID=2.5A | 3 | |
| Gate Threshold Voltage | VGS(TH) | 2.5 | 3.5 | 4.5 | V | VDS=VGS, ID=250uA | 3 |
| Forward Voltage | VSD | 1.5 | V | Is=2A, VGS=0V | 3 | ||
| Drain-to-Source Voltage | VDSS | 500 | V | 2 | |||
| Gate-to-Source Voltage | VGSS | -30 | 30 | V | 2 | ||
| Continuous Drain Current | ID | 5 | A | 2 | |||
| Pulsed Drain Current | IDM | 15 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | TJ=25 ºC, VDD=100V, VGS=10V, IL=4A, L=10mH, RG=25Ω | 2 | ||
| Power Dissipation | PD | 44.6 | W | 2 | |||
| Derating Factor above 25°C | PD | 0.36 | W/°C | 2 | |||
| Maximum Temperature for Soldering | TL | 260 | ºC | 2 | |||
| Operating and Storage Temperature Range | TJ&TSTG | -55 | 150 | ºC | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.8 | ºC/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 120 | ºC/W | 2 |
CAD (KiCad official)
- Symbol:
KIA5N50SD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
kia5n50sd-etched.step/kia5n50sd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia5n50sd.step/kia5n50sd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (5 pp, sha256
83838587c8906d4a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).