component
SWD7N60D
Public Made by Adomby adom
Samwin MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSWD7N60D
Samwin · MOSFETs · TO-252
SWD7N60D from Samwin, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-to-source voltage is rated at ±30 V maximum, with a threshold of 2.5 to 4.5 V at ID=250 µA. |
| 2 | Drain | passive | Drain terminal; drain-to-source voltage rated at 600 V and continuous drain current of 7 A at TC=25 °C (28 A pulsed). |
| 3 | Source | passive | Source terminal; continuous source (body diode) current is 7 A and pulsed source current is 28 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Samwin |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=600V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=480V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain to source on state resistance | RDS(ON) | 1.05 | 1.2 | Ω | VGS=10V, ID = 3.5A | 2 | |
| Diode forward voltage drop | VSD | 1.5 | V | IS=7A, VGS=0V | 2 | ||
| Continuous source current | IS | 7 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 28 | A | 2 | |||
| Drain to Source Voltage | VDSS | 600 | V | 1 | |||
| Continuous Drain Current | ID | 7 | A | TC=25oC | 1 | ||
| Continuous Drain Current | ID | 4.2 | A | TC=100oC | 1 | ||
| Drain current pulsed | IDM | 28 | A | note 1 | 1 | ||
| Gate to Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed Avalanche Energy | EAS | 420 | mJ | note 2 | 1 | ||
| Repetitive Avalanche Energy | EAR | 49 | mJ | note 1 | 1 | ||
| Peak diode Recovery dv/dt | dv/dt | 5 | V/ns | note 3 | 1 | ||
| Total power dissipation | PD | 125 | W | TC=25oC, TO252 column (assumed) | 1 | ||
| Operating Junction Temperature & Storage Temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum Lead Temperature for soldering | TL | 300 | oC | 1/8 from Case for 5 seconds | 1 | ||
| Thermal resistance, Junction to case | Rthjc | 1 | oC/W | TO252 column (assumed) | 1 | ||
| Thermal resistance, Junction to ambient | Rthja | 80 | oC/W | TO252 column (assumed) | 1 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.47 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward Transconductance | Gfs | 6 | S | VGS=30V, ID = 3.5A | 2 | ||
| Input capacitance | Ciss | 1300 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output capacitance | Coss | 110 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 13 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 14 | ns | VDS=300V, ID=7A, RG=25Ω | 2 | ||
| Rising time | tr | 32 | ns | VDS=300V, ID=7A, RG=25Ω | 2 | ||
| Turn off delay time | td(off) | 67 | ns | VDS=300V, ID=7A, RG=25Ω | 2 | ||
| Fall time | tf | 35 | ns | VDS=300V, ID=7A, RG=25Ω | 2 | ||
| Total gate charge | Qg | 30 | nC | VDS=480V, VGS=10V, ID=7A | 2 | ||
| Gate-source charge | Qgs | 5 | nC | VDS=480V, VGS=10V, ID=7A | 2 | ||
| Gate-drain charge | Qgd | 15 | nC | VDS=480V, VGS=10V, ID=7A | 2 | ||
| Reverse recovery time | Trr | 315 | ns | IS=7A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Breakdown voltage charge (reverse recovery charge) | Qrr | 3.1 | uC | IS=7A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Derating Factor above 25oC | 1 | W/oC | TO252 column (assumed) | 1 |
CAD (KiCad official)
- Symbol:
SWD7N60D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
swd7n60d-etched.step/swd7n60d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);swd7n60d.step/swd7n60d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Samwin datasheet (7 pp, sha256
f52fe895d56af31d, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).