component
NTMS4816NR2G
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownNTMS4816NR2G
UMW · MOSFETs · SOP-8
NTMS4816NR2G from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE terminal of the N-channel MOSFET, one of three source pins (1, 2, 3) on the SOP-8 package. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET, one of three source pins (1, 2, 3) on the SOP-8 package. |
| 3 | S | passive | SOURCE terminal of the N-channel MOSFET, one of three source pins (1, 2, 3) on the SOP-8 package. |
| 4 | G | input | GATE terminal; gate-source voltage VGSS is rated ±20 V (absolute maximum). |
| 5 | D | passive | DRAIN terminal of the N-channel MOSFET; drain-source voltage VDSS is rated 30 V. |
| 6 | D | passive | DRAIN terminal of the N-channel MOSFET; drain-source voltage VDSS is rated 30 V. |
| 7 | D | passive | DRAIN terminal of the N-channel MOSFET; drain-source voltage VDSS is rated 30 V. |
| 8 | D | passive | DRAIN terminal of the N-channel MOSFET; drain-source voltage VDSS is rated 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-Source Voltage | VGSS | 20 | V | 1 | |||
| Continuous Drain Current RθJA (Note 1), steady state | ID | 9 | A | TA=25°C, steady state | 1 | ||
| Continuous Drain Current RθJA (Note 1), steady state | ID | 7.2 | A | TA=70°C, steady state | 1 | ||
| Power Dissipation RθJA (Note 1), steady state | PD | 1.37 | W | TA=25°C, steady state | 1 | ||
| Continuous Drain Current RθJA (Note 2), steady state | ID | 6.8 | A | TA=25°C, steady state | 1 | ||
| Continuous Drain Current RθJA (Note 2), steady state | ID | 5.4 | A | TA=70°C, steady state | 1 | ||
| Power Dissipation RθJA (Note 2), steady state | PD | 0.78 | W | TA=25°C, steady state | 1 | ||
| Continuous Drain Current RθJA, t ≤ 10 s (Note 1) | ID | 11 | A | TA=25°C, t ≤ 10 s | 1 | ||
| Continuous Drain Current RθJA, t ≤ 10 s (Note 1) | ID | 8.8 | A | TA=70°C, t ≤ 10 s | 1 | ||
| Power Dissipation RθJA, t ≤ 10 s (Note 1) | PD | 2.04 | W | TA=25°C, t ≤ 10 s | 1 | ||
| Pulsed Drain Current | IDM | 33 | A | TA=25°C, TP=10µs | 1 | ||
| Operating Junction and Storage Temperature | TJ,TSTG | -55 | 150 | °C | 2 | ||
| Source Current (Body Diode) | IS | 2.7 | A | 2 | |||
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 78 | mJ | TJ=25°C, VDD=30V, VGS=10 V, IL=12.5Apk, L=1mH, RG=25 Ω | 2 | ||
| Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) | TL | 260 | °C | 1/8 in from case for 10 s | 2 | ||
| Junction-to-Ambient, Steady State (Note 1) | RthJA | 91.5 | °C/W | Surface mounted on FR4, 1 in sq pad (Note 1) | 2 | ||
| Junction-to-Ambient, t≤10s (Note 1) | RthJA | 61.3 | °C/W | t≤10s, Note 1 | 2 | ||
| Junction-to-Foot (Drain) | RthJF | 22.5 | °C/W | 2 | |||
| Junction-to-Ambient, Steady State (Note 2) | RthJA | 159.5 | °C/W | Surface mounted on FR4, minimum recommended pad (Note 2) | 2 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1.5 | 3 | V | VGS=VDS, ID=250µA | 3 | |
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VDS=0V, VGS=±20V | 3 | ||
| Drain-to-Source On Resistance | RDS(ON) | 10 | mΩ | VGS=10V, ID=9A | 3 | ||
| Drain-to-Source On Resistance | RDS(ON) | 16 | mΩ | VGS=4.5V, ID=7.2A | 3 | ||
| Input Capacitance | Ciss | 1060 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 220 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 126 | pF | VDS=25V, VGS=0V, f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
NTMS4816NR2G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ntms4816nr2g-etched.step/ntms4816nr2g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ntms4816nr2g.step/ntms4816nr2g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
ccf89d94125495ae, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).