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RSH065N06TB-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Contents

README

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RSH065N06TB-VB

VBsemi Elec · MOSFETs · SO-8

RSH065N06TB-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the source-drain diode continuous current IS is rated 4.2 A at TC = 25 °C.
2 S passive Source terminal of the N-channel MOSFET; the source-drain diode continuous current IS is rated 4.2 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET; the source-drain diode continuous current IS is rated 4.2 A at TC = 25 °C.
4 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±20 V (VGS).
5 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated 60 V and continuous drain current is 7.6 A at TC = 25 °C.
6 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated 60 V and continuous drain current is 7.6 A at TC = 25 °C.
7 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated 60 V and continuous drain current is 7.6 A at TC = 25 °C.
8 D passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated 60 V and continuous drain current is 7.6 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 7.6 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 6.8 A TC = 70 °C (TJ = 150 °C) 1
Continuous Drain Current ID 6.1 A TA = 25 °C (notes b, c) 1
Continuous Drain Current ID 4.8 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM 25 A 1
Continuous Source-Drain Diode Current IS 4.2 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.1 A TA = 25 °C (notes b, c) 1
Avalanche Current IAS 15 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 11.2 mJ 1
Maximum Power Dissipation PD 5 W TC = 25 °C 1
Maximum Power Dissipation PD 3.2 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 38 50 °C/W t ≤ 10 s (notes b, d) 1
Maximum Junction-to-Foot (Drain) RthJF 20 25 °C/W Steady State 1
Drain-Source Breakdown Voltage 60 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 25 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.025 Ω VGS = 10 V, ID = 4.6 A 2
Drain-Source On-State Resistance RDS(on) 0.035 Ω VGS = 4.5 V, ID = 4.2 A 2
Gate Resistance Rg 3.3 5 Ω f = 1 MHz 2
Total Gate Charge Qg 21 32 nC VDS = 30 V, VGS = 10 V, ID = 4.6 A 2
Turn-On Delay Time td(on) 20 30 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 150 225 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 20 30 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 60 90 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 10 15 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 15 25 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 25 40 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 30 V, RL = 5.4 Ω, ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.8 1.2 V IS = 2 A 2
Body Diode Reverse Recovery Time trr 25 50 ns IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 25 50 nC IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: RSH065N06TB-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: rsh065n06tb-vb-etched.step / rsh065n06tb-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rsh065n06tb-vb.step / rsh065n06tb-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 3cceb714066c7743, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF