component
SI6435ADQ-T1-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSI6435ADQ-T1-VB
VBsemi Elec · MOSFETs · TSSOP-8
SI6435ADQ-T1-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -20 V. |
| 2 | S | passive | Source pin, which must be tied in common with source pins 3, 6 and 7. |
| 3 | S | passive | Source pin, which must be tied in common with source pins 2, 6 and 7. |
| 4 | G | input | Gate of the P-channel MOSFET, with a gate-source voltage limit of ±12 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -20 V. |
| 6 | S | passive | Source pin, which must be tied in common with source pins 2, 3 and 7. |
| 7 | S | passive | Source pin, which must be tied in common with source pins 2, 3 and 6. |
| 8 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSSOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -1 | -0.45 | V | VDS = VGS, ID = -450 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -25 | µA | VDS = -20V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | -20 | A | VDS = -5 V, VGS = -4.5 V | 2 | ||
| Diode Forward Voltage | VSD | -0.56 | -1.1 | V | IS = -1.5 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 46 | 70 | nC | VDS = -10 V, VGS = -4.5 V, ID = -8.0 A | 2 | |
| Turn-On Delay Time | td(on) | 45 | 70 | ns | VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 85 | 130 | ns | VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 220 | 400 | ns | VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 155 | 235 | ns | VDD = -10 V, RL = 6 Ω, ID ≅ -1 A, VGEN = -4.5 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 140 | 210 | ns | IF = -1.5 A, di/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | -20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25 °C | 1 | |
| Continuous Drain Current, 10 s | ID | -9 | A | TJ = 150 °C, TA = 25 °C, 10 s | 1 | ||
| Continuous Drain Current, steady state | ID | -7.8 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current, 10 s | ID | -6.8 | A | TJ = 150 °C, TA = 70 °C, 10 s | 1 | ||
| Continuous Drain Current, steady state | ID | -5.8 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 10 µs pulse width | 1 | ||
| Continuous Source Current, 10 s | IS | -1.35 | A | Diode conduction, 10 s | 1 | ||
| Continuous Source Current, steady state | IS | -0.95 | A | Diode conduction, steady state | 1 | ||
| Maximum Power Dissipation, 10 s | PD | 1.5 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum Power Dissipation, steady state | PD | 1.05 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation, 10 s | PD | 1 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum Power Dissipation, steady state | PD | 0.67 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient, t ≤ 10 s | RthJA | 65 | 83 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 100 | 120 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 43 | 52 | °C/W | Steady State | 1 | |
| Drain-Source On-State Resistance | RDS(on) | 0.01 | Ω | VGS = -4.5 V, ID = -8.0 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.012 | Ω | VGS = -2.5 V, ID = -7.0 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.016 | Ω | VGS = -1.8 V, ID = -5.8 A | 2 | ||
| Forward Transconductance | gfs | 44 | S | VDS = -5 V, ID = -8.0 A | 2 | ||
| Gate-Source Charge | Qgs | 5 | nC | VDS = -10 V, VGS = -4.5 V, ID = -8.0 A | 2 | ||
| Gate-Drain Charge | Qgd | 15.5 | nC | VDS = -10 V, VGS = -4.5 V, ID = -8.0 A | 2 |
CAD (KiCad official)
- Symbol:
SI6435ADQ-T1-VB - Footprint:
Package_SO:TSSOP-8_3x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
si6435adq-t1-vb-etched.step/si6435adq-t1-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si6435adq-t1-vb.step/si6435adq-t1-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
4b7007edce276166, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).