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Contents

README

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AOD2210

Alpha Omega Semicon · MOSFETs · TO-252

AOD2210 from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the 200V N-channel MOSFET, with gate-source voltage rated at ±20V maximum.
2 D passive Drain terminal, rated for 200V drain-source and 18A continuous drain current at VGS=10V, and electrically connected to the exposed drain tab.
3 S passive Source terminal, referenced to the 200V drain-source and ±20V gate-source ratings.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=200V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=200V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.5 2 2.5 V VDS=VGS, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 87 105 mΩ VGS=10V, ID=18A 2
Static Drain-Source On-Resistance at TJ=125°C RDS(ON) 185 225 mΩ VGS=10V, ID=18A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 93 120 mΩ VGS=5V, ID=16A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 18 A 2
Gate resistance Rg 1.1 2.2 3.3 Ω f=1MHz 2
Total Gate Charge (10V) Qg (10V) 27 40 nC VGS=10V, VDS=100V, ID=18A 2
Total Gate Charge (4.5V) Qg (4.5V) 12 20 nC 2
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 18 A TC=25°C 1
Continuous Drain Current ID 13 A TC=100°C 1
Pulsed Drain Current IDM 45 A 1
Power Dissipation PDSM 2.5 W TA=25°C 1
Power Dissipation PDSM 1.6 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Maximum Junction-to-Ambient (t≤10s) RθJA 15 20 °C/W t≤10s 1
Maximum Junction-to-Ambient (steady state) RθJA 41 50 °C/W Steady-State 1
Maximum Junction-to-Case RθJC 1.5 °C/W Steady-State 4

CAD (KiCad official)

  • Symbol: AOD2210
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod2210-etched.step / aod2210-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod2210.step / aod2210.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 8a1448c73224a64b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF