component

SWI7N65D

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Samwin MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorswi7n65dfactory-2.0.0extractor-text

Verified SWI7N65D

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SWI7N65D · TO-251 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-251-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-r5yd4c05/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ swi7n65d.kicad_sym✓ swi7n65d.kicad_mod✓ swi7n65d.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

SWI7N65D

Samwin · MOSFETs · TO-251

SWI7N65D from Samwin, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the gate-to-source voltage is rated ±30 V (VGS).
2 Drain passive Drain terminal; the drain-to-source voltage is rated 650 V (VDSS) and continuous drain current is 7 A at TC=25 °C, limited by junction temperature.
3 Source passive Source terminal; the integral reverse p-n junction body diode has a continuous source current rating of 7 A and pulsed source current of 28 A.

Key specifications

Parameter Value
Manufacturer Samwin
Package TO-251
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to source voltage VDSS 650 V 1
Continuous drain current ID 7 A @TC=25oC 1
Continuous drain current ID 4.4 A @TC=100oC 1
Drain current pulsed IDM 28 A note 1 1
Gate to source voltage VGS -30 30 V 1
Single pulsed avalanche energy EAS 430 mJ note 2 1
Repetitive avalanche energy EAR 40 mJ note 1 1
Peak diode recovery dv/dt dv/dt 5 V/ns note 3 1
Total power dissipation PD 173.6 W @TC=25oC, TO-251 column 1
Derating factor above 25oC 1.39 W/oC TO-251 column 1
Operating junction temperature and storage temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering purpose TL 300 oC 1/8 from case for 5 seconds 1
Drain to source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=650V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=520V, TJ=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 1.1 1.4 Ω VGS=10V, ID = 3.5A, TJ=25oC 2
Drain to source on state resistance RDS(ON) 2.4 Ω VGS=10V, ID = 3.5A, TJ=125oC 2
Continuous source current IS 7 A Integral reverse p-n junction diode in the MOSFET 2
Pulsed source current ISM 28 A 2
Diode forward voltage drop VSD 1.4 V IS=7A, VGS=0V 2
Thermal resistance, Junction to case Rthjc 0.72 oC/W TO-251 column 2
Thermal resistance, Junction to ambient Rthja 82 oC/W TO-251 column 2

CAD (KiCad official)

  • Symbol: SWI7N65D
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: swi7n65d-etched.step / swi7n65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); swi7n65d.step / swi7n65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Samwin datasheet (8 pp, sha256 896ad7fd66d17340, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF