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Contents

README

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BSN20BKR

Nexperia · MOSFETs · SOT-23

BSN20BKR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; control input with VGS = -20 to 20 V (Tj = 25 °C) and gate-source threshold voltage VGS(th) = 0.6 to 1.4 V.
2 S passive Source terminal; includes intrinsic body diode with maximum source current IS = 200 mA at Tamb = 25 °C.
3 D passive Drain terminal; absolute maximum drain-source voltage VDS = 60 V and continuous drain current ID = 265 mA at Tamb = 25 °C on FR4 PCB.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 3
Gate-source voltage VGS -20 20 V Tj = 25 °C 3
Drain current ID 265 mA VGS = 10 V; Tamb = 25 °C [1] 3
Drain current ID 170 mA VGS = 10 V; Tamb = 100 °C [1] 3
Drain current ID 330 mA VGS = 10 V; Tsp = 25 °C 3
Peak drain current IDM 0.9 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 310 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 402 mW [1] 3
Total power dissipation Ptot 1672 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current (source-drain diode) IS 200 mA Tamb = 25 °C [1] 3
Thermal resistance from junction to ambient Rth(j-a) 351 404 K/W in free air [1] 4
Thermal resistance from junction to ambient Rth(j-a) 271 311 K/W [2] 4
Thermal resistance from junction to ambient Rth(j-a) 210 241 K/W t ≤ 5 s [2] 4
Thermal resistance from junction to solder point Rth(j-sp) 65 75 K/W 4
Drain-source breakdown voltage V(BR)DSS 60 V ID = 250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth 0.6 1 1.4 V ID = 250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS 1 µA VDS = 60 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 10 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -10 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 1 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 0.3 µA VGS = 5 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -0.3 µA VGS = -5 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 2.1 2.8 Ω VGS = 10 V; ID = 200 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 4.3 5.7 Ω VGS = 10 V; ID = 200 mA; Tj = 150 °C 6
Drain-source on-state resistance RDSon 2.2 3.2 Ω VGS = 5 V; ID = 200 mA; Tj = 25 °C 6
Drain-source on-state resistance RDSon 2.6 4 Ω VGS = 2.5 V; ID = 75 mA; Tj = 25 °C 6
Output capacitance Coss 3.1 10 pF VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Reverse transfer capacitance Crss 2 7 pF VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C 6
Source-drain voltage VSD 0.86 1.2 V IS = 200 mA; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: BSN20BKR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bsn20bkr-etched.step / bsn20bkr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsn20bkr.step / bsn20bkr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (16 pp, sha256 995e2719cc48f1fb, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF