Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

NCE0140AK2

Wuxi NCE Power Semiconductor · MOSFETs · TO-252-2L

NCE0140AK2 from Wuxi NCE Power Semiconductor, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±20 V maximum and threshold VGS(th) of 0.9 V min to 1.6 V max at 250 μA.
2 D passive Drain; connected to the exposed tab, with VDS rated at 100 V and continuous ID of 40 A.
3 S passive Source; main current return terminal of the N-channel MOSFET, continuous ID of 40 A at TC=25℃.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 40 A TC=25℃ 1
Drain Current-Continuous (TC=100℃) ID (100℃) 28 A TC=100℃ 1
Pulsed Drain Current IDM 160 A TC=25℃ 1
Maximum Power Dissipation PD 140 W TC=25℃ 1
Derating factor 0.93 W/℃ TC=25℃ 1
Single pulse avalanche energy EAS 350 mJ Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.07 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.9 1.3 1.6 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 14 17 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(ON) 15 18 mΩ VGS=4.5V, ID=20A 2
Forward Transconductance gFS 32 S VDS=5V,ID=20A 2
Diode Forward Voltage VSD 0.85 1.2 V VGS=0V,IS=20A 2
Diode Forward Current IS 40 A 2
Input Capacitance Clss 4700 PF VDS=50V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 176 PF VDS=50V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 148 PF VDS=50V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 15 nS VDD=30V,RL=1.5Ω, RG=2.5Ω,VGS=10V 2
Turn-on Rise Time tr 11 nS VDD=30V,RL=1.5Ω, RG=2.5Ω,VGS=10V 2
Turn-Off Delay Time td(off) 52 nS VDD=30V,RL=1.5Ω, RG=2.5Ω,VGS=10V 2
Turn-Off Fall Time tf 13 nS VDD=30V,RL=1.5Ω, RG=2.5Ω,VGS=10V 2
Total Gate Charge Qg 119 nC ID=20A,VDD=50V,VGS=10V 2
Gate-Source Charge Qgs 11.4 nC ID=20A,VDD=50V,VGS=10V 2
Gate-Drain Charge Qgd 22.9 nC ID=20A,VDD=50V,VGS=10V 2
Reverse Recovery Time trr 33 nS TJ = 25°C, IF = 20A, di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 54 nC TJ = 25°C, IF = 20A, di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: NCE0140AK2
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: nce0140ak2-etched.step / nce0140ak2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce0140ak2.step / nce0140ak2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 f62786135c19139c, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF