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SI3458BDV-T1-GE3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI3458BDV-T1-GE3-VB
VBsemi Elec · MOSFETs · TSOP-6
SI3458BDV-T1-GE3-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, tied with pins 2, 5 and 6; VDS rated 60 V and continuous drain current 7 A at TC = 25 °C. |
| 2 | D | passive | Drain, tied with pins 1, 5 and 6; VDS rated 60 V and continuous drain current 7 A at TC = 25 °C. |
| 3 | G | input | Gate; gate-source voltage limit ±20 V, threshold 1.0 V min to 2.5 V max at 250 µA. |
| 4 | S | passive | Source; continuous source (diode) current 6 A, pulsed 29 A. |
| 5 | D | passive | Drain, tied with pins 1, 2 and 6; VDS rated 60 V and continuous drain current 7 A at TC = 25 °C. |
| 6 | D | passive | Drain, tied with pins 1, 2 and 5; VDS rated 60 V and continuous drain current 7 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | 500 | nA | VDS = 0 V, VGS = ± 12 V | 2 | ||
| Gate-Source Leakage | IGSS | 1 | mA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 60 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 10 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Input Capacitance | Ciss | 560 | 700 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 85 | 105 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 55 | 70 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 | |
| Gate Resistance | Rg | 1.2 | 2.4 | 3.6 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 9 | 14 | ns | VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 18 | ns | VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 19 | 29 | ns | VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 7 | 11 | ns | VDD = 30 V, RL = 7.5 Ω, ID ≅ 4 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed Current | ISM | 29 | A | 2 | |||
| Forward Voltage | VSD | 0.75 | 1.2 | V | IF = 1.6 A, VGS = 0 | 2 | |
| Drain-Source Voltage | VDS | 60 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 7 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 4 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 6 | A | TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 29 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | 10 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 5 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient PCB Mount | RthJA | 110 | °C/W | mounted on 1" square PCB (FR-4) | 1 | ||
| Junction-to-Foot (Drain) | RthJF | 30 | °C/W | 1 | |||
| Drain-Source On-State Resistance | RDS(on) | 0.03 | Ω | VGS = 10 V, ID = 5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.05 | Ω | VGS = 10 V, ID = 5 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.07 | Ω | VGS = 10 V, ID = 5 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.035 | Ω | VGS = 4.5 V, ID = 4 A | 2 | ||
| Forward Transconductance | gfs | 12 | S | VDS = 15 V, ID = 4 A | 2 | ||
| Gate-Source Charge | Qgs | 2.1 | nC | VGS = 4.5 V, VDS = 30 V, ID = 4 A | 2 | ||
| Gate-Drain Charge | Qgd | 4.1 | nC | VGS = 4.5 V, VDS = 30 V, ID = 4 A | 2 |
CAD (KiCad official)
- Symbol:
SI3458BDV-T1-GE3-VB - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
si3458bdv-t1-ge3-vb-etched.step/si3458bdv-t1-ge3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si3458bdv-t1-ge3-vb.step/si3458bdv-t1-ge3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
b9dbf759f1af96ed, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).