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Contents

README

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HSM4P10D

HUASHUO · MOSFETs · SOP-8

HSM4P10D from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; the MOSFET is rated for VDS of -100 V.
2 G1 input Gate of P-channel MOSFET 1; the gate-source voltage is limited to ±20 V.
3 S2 passive Source of P-channel MOSFET 2; the MOSFET is rated for VDS of -100 V.
4 G2 input Gate of P-channel MOSFET 2; the gate-source voltage is limited to ±20 V.
5 D2 passive Drain of P-channel MOSFET 2; continuous drain current is -4 A at TA=25℃.
6 D2 passive Drain of P-channel MOSFET 2, tied to pin 5; continuous drain current is -4 A at TA=25℃.
7 D1 passive Drain of P-channel MOSFET 1; continuous drain current is -4 A at TA=25℃.
8 D1 passive Drain of P-channel MOSFET 1, tied to pin 7; continuous drain current is -4 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 105 150 mΩ VGS=-10V, ID=-4A 2
Static Drain-Source On-Resistance RDS(ON) 115 180 mΩ VGS=-4.5V, ID=-3A 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-100V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -4 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ -4 A VGS @ -10V 1
Continuous Drain Current ID@TA=100℃ -3.2 A VGS @ -10V 1
Pulsed Drain Current IDM -16 A 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-Case RθJC 40 ℃/W 1
Total Gate Charge Qg 17 nC VDS=-50V, VGS=-10V, ID=-4A 2
Gate-Source Charge Qgs 5 nC VDS=-50V, VGS=-10V, ID=-4A 2
Gate-Drain Charge Qgd 7 nC VDS=-50V, VGS=-10V, ID=-4A 2
Turn-On Delay Time Td(on) 9 ns VDD=-50V, VGS=-10V, RG=3.3, ID=-4A 2
Rise Time Tr 15 ns VDD=-50V, VGS=-10V, RG=3.3, ID=-4A 2
Turn-Off Delay Time Td(off) 69 ns VDD=-50V, VGS=-10V, RG=3.3, ID=-4A 2
Fall Time Tf 23 ns VDD=-50V, VGS=-10V, RG=3.3, ID=-4A 2
Input Capacitance Ciss 1070 pF VDS=-50V, VGS=0V, f=1MHz 2
Output Capacitance Coss 69 pF VDS=-50V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 36 pF VDS=-50V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: HSM4P10D
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm4p10d-etched.step / hsm4p10d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm4p10d.step / hsm4p10d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 05697df3184fccfa, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF