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Contents

README

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PMV75UP

Nexperia · MOSFETs · TO-236AB

PMV75UP from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; the datasheet gives only the terminal function, and the gate-source voltage is limited to -12 V to 12 V (Table 5, page 3).
2 S passive Source terminal of the P-channel MOSFET; the datasheet gives only the terminal function, with the source current limited to -0.9 A for the source-drain diode (Table 5, page 3).
3 D passive Drain terminal of the P-channel MOSFET; the drain current is limited to -3.2 A at Tamb = 25 °C with t ≤ 5 s on the 6 cm² mounting pad (Table 5, page 3), and the drain-source voltage is -20 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V 3
Gate-source voltage VGS -12 12 V Tj = 25 °C 3
Drain current ID -3.2 A VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] 3
Drain current ID -2.5 A VGS = -4.5 V; Tamb = 25 °C [1] 3
Drain current ID -1.6 A VGS = -4.5 V; Tamb = 100 °C [1] 3
Peak drain current IDM -10 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Total power dissipation Ptot 490 mW Tamb = 25 °C [2] 3
Total power dissipation Ptot 1000 mW Tamb = 25 °C [1] 3
Total power dissipation Ptot 5000 mW Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS -0.9 A Tamb = 25 °C [1] 3
Thermal resistance from junction to ambient Rth(j-a) 217 255 K/W in free air [1]: FR4 PCB, single-sided copper, standard footprint 4
Thermal resistance from junction to ambient Rth(j-a) 105 124 K/W in free air [2]: FR4 PCB, mounting pad for drain 6 cm2 4
Thermal resistance from junction to ambient Rth(j-a) 73 86 K/W in free air; t ≤ 5 s [2]: FR4 PCB, mounting pad for drain 6 cm2 4
Thermal resistance from junction to solder point Rth(j-sp) 20 25 K/W 4
Drain-source breakdown voltage V(BR)DSS -20 V ID = -250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth -0.47 -0.68 -0.9 V ID = -250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS -1 µA VDS = -20 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 100 nA VGS = 12 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 77 102 mΩ VGS = -4.5 V; ID = -2.5 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 110 146 mΩ VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C 6
Drain-source on-state resistance RDSon 95 125 mΩ VGS = -2.5 V; ID = -2.2 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 120 156 mΩ VGS = -1.8 V; ID = -1 A; Tj = 25 °C 6
Total gate charge QG(tot) 5 7.5 nC VDS = -10 V; ID = -2.5 A; VGS = -4.5 V; Tj = 25 °C 6
Source-drain voltage VSD -0.8 -1.2 V IS = -0.9 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMV75UP
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: pmv75up-etched.step / pmv75up-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv75up.step / pmv75up.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 a1be6407f08aaac8, retrieved 2026-10-14, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF