component
HDMNH6008SPS
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8L(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHDMNH6008SPS
HXY MOSFET · MOSFETs · DFN-8L(5x6)
HDMNH6008SPS from HXY MOSFET, in a DFN-8L(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; pin 1 is marked on the package, and the pin sits on the same side as pins 2 and 3 (S) and pin 4 (G). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, in the source group with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, in the source group with pins 1 and 2. |
| 4 | G | input | Gate terminal; VGS rated ±20 V, and the device operates with gate voltages as low as 4.5 V (VGS(th) 2 to 4 V). |
| 5 | D | passive | Drain terminal; VDS rated 60 V and continuous ID 80 A at TC=25℃, connected to pins 6 to 8. |
| 6 | D | passive | Drain terminal, connected to pins 5, 7 and 8; VDS rated 60 V. |
| 7 | D | passive | Drain terminal, connected to pins 5, 6 and 8; VDS rated 60 V. |
| 8 | D | passive | Drain terminal, connected to pins 5 to 7; VDS rated 60 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8L(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 80 | A | TC=25℃; VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 52 | A | TC=100℃; VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 320 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 169 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 108 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.4 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 5.3 | 7 | mΩ | VGS=10V, ID=30A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 80 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 320 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 |
CAD (KiCad official)
- Symbol:
HDMNH6008SPS - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8L(5x6) (KiCad packages3D, STEP)
- 3D model files:
hdmnh6008sps-etched.step/hdmnh6008sps-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hdmnh6008sps.step/hdmnh6008sps.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
d5a2389810879492, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).