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Contents

README

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BUK9575-55A-VB

VBsemi Elec · MOSFETs · TO-220AB

BUK9575-55A-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Logic-level MOSFET gate control input. VGS(th) 1.0-2.5 V; maximum gate-source voltage ±20 V. RDS(on) = 24 mΩ at VGS=10 V, 28 mΩ at VGS=4.5 V.
2 D passive Drain. MOSFET drain terminal, VDS(max) = 60 V, continuous drain current up to 50 A at TC=25 °C (36 A at TC=100 °C), pulsed ID = 200 A. Internally connected to the tab.
3 S passive Source. MOSFET source terminal; body diode anode. Continuous source-drain diode current 50 A, body diode voltage VSD ≤ 2.5 V at IS=51 A.
4 D passive Drain (heatsink tab). Metal tab electrically connected to the drain; used for thermal dissipation with RthJC = 1.0 °C/W. Often soldered or bolted to a heatsink.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 4

CAD (KiCad official)

  • Symbol: BUK9575-55A-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: buk9575-55a-vb-etched.step / buk9575-55a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); buk9575-55a-vb.step / buk9575-55a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 fd679eb4426aa4c3, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF