Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

9N20

GOODWORK · MOSFETs · TO-220

9N20 from GOODWORK, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V.
2 Drain passive Drain terminal of the N-channel MOSFET, rated for 200 V drain-source voltage and 9 A continuous drain current at TC=25℃.
3 Source passive Source terminal of the N-channel MOSFET, serving as the reference for the gate-source voltage rating of ±20 V.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 9 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 5.2 A VGS @ 10V 1
Pulsed Drain Current IDM 10 A 1
Single Pulse Avalanche Energy EAS 2.45 mJ 1
Avalanche Current IAS 7 A 1
Total Power Dissipation PD@TC=25℃ 60 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 40 ℃/W 1
Thermal Resistance Junction-Case RθJC 2.5 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 200 V VDS=0V,ID=250 A 2
Zero Gate Voltage Drain Current IDSS 1 A VDS=160V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 50 A VDS=160V,VGS=0V,TJ=125 2
Zero Gate Voltage Drain Current IDSS 250 A VDS=160V,VGS=0V,TJ=175 2
Gate-body Leakage IGSS -100 100 nA VDS=0V, VGS= 20V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250 A 2
On-State Drain Current ID(on) 10 A VDS 5 V, VGS =10 V 2
Static drain-Source On-resistance RDS(on) 0.216 0.27 Ω VGS=10V,ID=5A 2
Static drain-Source On-resistance RDS(on) 0.54 Ω VGS=10V,ID=5A,TJ=125 2
Static drain-Source On-resistance RDS(on) 0.71 Ω VGS=10V,ID=5A,TJ=175 2
Static drain-Source On-resistance RDS(on) 0.24 0.3 Ω VGS=6V,ID=5A 2
Turn-On Delay Time tD(ON) 10 15 ns VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V 2
Rise Time tR 35 55 ns VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V 2
Turn-Off Delay Time tD(OFF) 25 40 ns VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V 2
Fall Time tF 40 60 ns VDD = 100V, ID=10A, RL= 10, RG= 2.5, VGEN=10V 2
Total Gate Charge Qg 11 70 nC VDS=100V,VGS=10V, ID=10A 2
Forward Transconductance gfs 15 S VDS=15V,ID=5A 2
Reverse Recovery Time Trr 100 150 ns IF=10A, dIF/dt=100A/ s 2
Reverse Recovery Charge Qrr 0.25 0.6 C IF=10A, dIF/dt=100A/ s 2
Reverse Recovery Current IRM 5 8 A IF=10A, dIF/dt=100A/ s 2
Continuous Current IS 9 A 2
Forward Voltage VSD 0.9 1.5 V IF = 10 A, VGS = 0 V 2

CAD (KiCad official)

  • Symbol: 9N20
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: 9n20-etched.step / 9n20-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 9n20.step / 9n20.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (6 pp, sha256 01cc4904e69da410, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF