component
2SB772T-P
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SB772T-P
Foshan Blue Rocket Elec · Bipolar (BJT) · SOT-89
2SB772T-P from Foshan Blue Rocket Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the PNP transistor; for the -P hFE class (marking H72P) the datasheet gives an hFE range of 160～320. |
| 2 | Collector | passive | Collector terminal; the datasheet limits continuous collector current IC to -3.0 A, collector-to-emitter voltage VCEO to -30 V, and collector power dissipation PC to 500 mW. |
| 3 | Emitter | passive | Emitter terminal; the datasheet rates emitter-to-base voltage VEBO at -5.0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | VCBO | -40 | V | Ta=25℃ | 2 | ||
| Collector to Emitter Voltage | VCEO | -30 | V | Ta=25℃ | 2 | ||
| Emitter to Base Voltage | VEBO | -5 | V | Ta=25℃ | 2 | ||
| Collector Current-Continuous | IC | -3 | A | Ta=25℃ | 2 | ||
| Collector Power Dissipation | PC | 500 | mW | Ta=25℃ | 2 | ||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector to Base Breakdown Voltage | VCBO | -40 | V | IC=-100μA IE=0 | 2 | ||
| Collector to Emitter Breakdown Voltage | VCEO | -30 | V | IC=-1mA IB=0 | 2 | ||
| Collector Cut-Off Current | ICBO | -1 | μA | VCB=-30V IE=0 | 2 | ||
| Emitter Base Cut-Off Current | IEBO | -1 | μA | VEB=-3.0V IC=0 | 2 | ||
| DC Current Gain hFE(1) | hFE(1) | 60 | 160 | 400 | VCE=-2.0V IC=-1.0A | 2 | |
| DC Current Gain hFE(2) | hFE(2) | 30 | 220 | VCE=-2.0V IC=-20mA | 2 | ||
| DC Current Gain classification P (marking H72P) | hFE | 160 | 320 | 1 | |||
| Collector to Emitter Saturation Voltage | VCE(sat) | -0.3 | -0.5 | V | IC=-2.0A IB=-0.2A | 2 | |
| Base to Emitter Saturation Voltage | VBE(sat) | -1 | -2 | V | IC=-2.0A IB=-0.2A | 2 |
CAD (KiCad official)
- Symbol:
2SB772T-P - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sb772t-p-etched.step/2sb772t-p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sb772t-p.step/2sb772t-p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256
058cce322da2766f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).