component
YJL3139KADW
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Yangzhou Yangjie Elec Tech MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYJL3139KADW
Yangzhou Yangjie Elec Tech · MOSFETs · SOT-363
YJL3139KADW from Yangzhou Yangjie Elec Tech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel, VDS -20V, ID -0.5A at TA=25℃). |
| 2 | G1 | input | Gate of MOSFET 1 with ESD protection up to 2.0kV HBM; VGS max ±12V. |
| 3 | D2 | passive | Drain of MOSFET 2 (VDS -20V, ID -0.5A, pulsed IDM -2.6A). |
| 4 | S2 | passive | Source of MOSFET 2 (P-channel, VDS -20V, ID -0.5A at TA=25℃). |
| 5 | G2 | input | Gate of MOSFET 2 with ESD protection up to 2.0kV HBM; VGS max ±12V. |
| 6 | D1 | passive | Drain of MOSFET 1 (VDS -20V, ID -0.5A, pulsed IDM -2.6A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | -20 | V | 1 | |||
| Gate-source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current | ID | -0.5 | A | TA=25℃ Steady State | 1 | ||
| Drain Current | ID | -0.4 | A | TA=70℃ Steady State | 1 | ||
| Pulsed Drain Current | IDM | -2.6 | A | 1 | |||
| Total Power Dissipation | PD | 0.15 | W | TA=25℃ Steady State | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 833 | ℃/W | Steady State, device mounted on FR-4 PCB (note B) | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS= 0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V,VGS=0V,TC=25℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | 1.5 | 10 | μA | VGS= ±10V, VDS=0V | 2 | |
| Gate-Body Leakage Current | IGSS | 500 | 2000 | nA | VGS= ±8V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.35 | -0.62 | -1.2 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 580 | 850 | mΩ | VGS= -4.5V, ID=-0.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 855 | 1200 | mΩ | VGS= -2.5V, ID=-0.3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1350 | 2000 | mΩ | VGS= -1.8V, ID=-0.2A | 2 | |
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | IS=-0.5A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -0.5 | A | 2 |
CAD (KiCad official)
- Symbol:
YJL3139KADW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
yjl3139kadw-etched.step/yjl3139kadw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjl3139kadw.step/yjl3139kadw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
0dc24debd5087a77, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).