component
BSS64LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS64LT1G
onsemi · Bipolar (BJT) · SOT-23
BSS64LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN driver transistor; the device maximum emitter-base voltage is VEBO 5.0 Vdc and continuous collector current is IC 100 mAdc. |
| 2 | EMITTER | passive | Emitter terminal of the NPN driver transistor; the maximum emitter-base voltage rating is VEBO 5.0 Vdc. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN driver transistor; the maximum ratings are VCEO 80 Vdc and VCBO 120 Vdc, with continuous collector current IC 100 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 80 | Vdc | IC = 4.0 mAdc | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 120 | Vdc | IC = 100 Adc | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | Vdc | IE = 100 Adc | 2 | ||
| Collector Cutoff Current | ICBO | 0.1 | Adc | VCE = 90 Vdc | 2 | ||
| Collector Cutoff Current | ICBO | 500 | Adc | TA = 150°C | 2 | ||
| Emitter Cutoff Current | IEBO | 200 | nAdc | VEB = 4.0 Vdc | 2 | ||
| DC Current Gain | HFE | 20 | VCE = 1.0 Vdc, IC = 10 mAdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.15 | Vdc | IC = 4.0 mAdc, IB = 400 Adc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 | Vdc | IC = 50 mAdc, IB = 15 mAdc | 2 | ||
| Current-Gain - Bandwidth Product | fT | 60 | MHz | IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz | 2 | ||
| Output Capacitance | Cob | 20 | pF | VCB = 10 Vdc, f = 1.0 MHz | 2 | ||
| Collector-Emitter Voltage | VCEO | 80 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | 120 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | Vdc | 1 | |||
| Collector Current - Continuous | IC | 100 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | FR-5 board (Note 1), TA = 25°C | 1 | ||
| Derate above 25°C (FR-5 Board) | PD | 1.8 | mW/°C | FR-5 board (Note 1), derate above 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 556 | °C/W | FR-5 board (Note 1) | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | Alumina substrate (Note 2), TA = 25°C | 1 | ||
| Derate above 25°C (Alumina Substrate) | PD | 2.4 | mW/°C | Alumina substrate (Note 2), derate above 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RθJA | 417 | °C/W | Alumina substrate (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
BSS64LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss64lt1g-etched.step/bss64lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss64lt1g.step/bss64lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
8277770e6e29ffee, retrieved 2026-10-18, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).